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  ON Semiconductor Electronic Components Datasheet  

MBR30L45CTG Datasheet

Switch-mode Power Rectifier

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MBR30L45CTG,
MBRF30L45CTG
Switch-mode
Power Rectifier
45 V, 30 A
Features and Benefits
Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capacity
150°C Operating Junction Temperature
30 A Total (15 A Per Diode Leg)
Guard−Ring for Stress Protection
Applications
Power Supply − Output Rectification
Power Management
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight (Approximately): 1.9 Grams
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped 50 Units Per Plastic Tube
This is a Pb−Free Device*
MAXIMUM RATINGS
Please See the Table on the Following Page
www.onsemi.com
DUAL SCHOTTKY
BARRIER RECTIFIERS
30 AMPERES, 45 VOLTS
1
2, 4
3
MARKING
DIAGRAMS
4
1
2
3
TO−220
CASE 221A
PLASTIC
AYWW
B30L45G
AKA
TO−220 FULLPAK B30L45G
CASE 221AH
YWW
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
B30L45
A
Y
WW
AKA
G
= Device Code
= Assembly Location
= Year
= Work Week
= Polarity Designator
= Pb−Free Device
ORDERING INFORMATION
Device
Package
Shipping
MBR30L45CTG
TO−220
(Pb−Free)
50 Units/Rail
MBRF30L45CTG
TO−220FP 50 Units/Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. 3
1
Publication Order Number:
MBR30L45CT/D


  ON Semiconductor Electronic Components Datasheet  

MBR30L45CTG Datasheet

Switch-mode Power Rectifier

No Preview Available !

MBR30L45CTG, MBRF30L45CTG
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC = 137°C
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
45
15
30
190
V
A
A
A
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated VR)
ESD Ratings: Machine Model = C
Human Body Model = 3B
TJ
Tstg
dv/dt
−55 to +150
*55 to +175
10,000
> 400
> 8000
°C
°C
V/ms
V
THERMAL CHARACTERISTICS
Maximum Thermal Resistance
(MBR30L45CTG)
(MBRF30L45CTG)
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Junction−to−Case
Junction−to−Ambient
Junction−to−Case
RqJC
RqJA
RqJC
°C/W
1.9
45
2.2
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 15 A, TC = 25°C)
(IF = 15 A, TC = 125°C)
(IF = 30 A, TC = 25°C)
(IF = 30 A, TC = 125°C)
vF V
0.50
0.44
0.61
0.60
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC = 25°C)
(Rated DC Voltage, TC = 125°C)
iR mA
0.65
250
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
www.onsemi.com
2


Part Number MBR30L45CTG
Description Switch-mode Power Rectifier
Maker ON Semiconductor
Total Page 7 Pages
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