MBR350 Datasheet | onsemi

features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage, high- frequency inverters, free wheeling diodes, and polarity protection diodes. Features - Extremely Low v F - Low Power Loss/High Efficiency - Highly Stable Oxide Passivated Junction - Low Stored Charge, Majority Carrier Conduction - Pb- Free Packages are Available- Mechanical Characteristics: - Case: Epoxy, Molded - Weight: 1.1 Gram (Approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds - Polarity: Cathode indicated by Polarity Band MAXIMUM RATINGS Rating Symbol Max Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM MBR350 VR MBR360 Average Rectified Forward Current TA = 65C (Rq JA = 28C/W, P.C. Board Mounting) Non- Repetitive Peak Surge Current (Note 1) (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz, TL = 75C) Operating and Storage Junction Temperature Range (Reverse Voltage Applied) IFSM TJ, Tstg - 65 to C +150 THERMAL CHARACTERISTICS Thermal Resistance, Junction- to- Ambient Rq JA (see Note 4 - Mounting Data, Mounting Method 3) 28...