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MBR4015LWT Datasheet Schottky Power Rectifier

Manufacturer: onsemi

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Overview

MBR4015LWT SWITCHMODEt Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier.

Key Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features.
  • Highly Stable Oxide Passivated Junction.
  • Guardring for Overvoltage Protection.
  • Low Forward Voltage Drop.
  • Dual Diode Construction; Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating.
  • Full Electrical Isolation without Additio.

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