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MBR4045PT Datasheet

Power Rectifier

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MBR4045PT
SWITCHMODE
Power Rectifier
Features and Benefits
Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
40 A Total (20 A Per Diode Leg)
PbFree Package is Available*
Applications
Power Supply Output Rectification
Power Management
Instrumentation
Mechanical Characteristics
Case: Epoxy, Molded
Epoxy Meets UL 94, V0 @ 0.125 in
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperatures for Soldering Purposes: 260°C Max. for 10
Seconds
ESD Rating:
Human Body Model 3B
Machine Model C
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
40 AMPERES
45 VOLTS
1
2,4
3
SOT93
CASE 340D
STYLE 2
MARKING DIAGRAM
AYWWG
B4045
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 7
B4045
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
ORDERING INFORMATION
Device
Package
Shipping
MBR4045PT
SOT93
30 Units/Rail
MBR4045PTG
SOT93
(PbFree)
30 Units/Rail
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1 Publication Order Number:
MBR4045PT/D


  ON Semiconductor Electronic Components Datasheet  

MBR4045PT Datasheet

Power Rectifier

No Preview Available !

MBR4045PT
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 125°C)
Per Diode
Per Device
VRRM
VRWM
VR
IF(AV)
45
20
40
V
A
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz
@ TC = 90°C) Per Diode
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase,
60 Hz)
IFRM
IFSM
40
400
A
A
Peak Repetitive Reverse Current,
(2.0 ms, 1.0 kHz)
IRRM
2.0
A
Storage Temperature Range
Operating Junction Temperature (Note 1)
Peak Surge Junction Temperature
(Forward Current Applied)
Tstg
TJ
TJ(pk)
65 to +175
65 to +175
175
°C
°C
°C
Voltage Rate of Change
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may
affect device reliability.
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance, JunctiontoCase
Maximum Thermal Resistance, JunctiontoAmbient
Conditions
Minimum Pad
Minimum Pad
Symbol
RqJC
RqJA
Max
1.4
55
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Instantaneous Forward Voltage (Note 2)
(iF = 20 A, TJ = 25°C)
(iF = 20 A, TJ = 125°C)
(iF = 40 A, TJ = 25°C)
(iF = 40 A, TJ = 125°C)
Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TJ = 25°C)
(Rated DC Voltage, TJ = 125°C)
Symbol
VF
iR
Min
Typ
0.53
0.46
0.64
0.62
0.09
30
Max
0.70
0.60
0.80
0.75
1.0
50
Unit
V
mA
http://onsemi.com
2


Part Number MBR4045PT
Description Power Rectifier
Maker ON Semiconductor
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MBR4045PT Datasheet PDF





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