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  ON Semiconductor Electronic Components Datasheet  

MBR40L45CTG Datasheet

Switch-mode Power Rectifier

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MBR40L45CTG,
NRVBB40L45CTT4G
Switch-mode
Power Rectifier
45 V, 40 A
Features and Benefits
Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
40 A Total (20 A Per Diode Leg)
Guard−Ring for Stress Protection
NRVBB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Applications
Power Supply − Output Rectification
Power Management
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight (Approximately): 1.9 Grams (TO−220)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped 50 Units Per Plastic Tube for TO−220
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 3
1
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
40 AMPERES, 45 VOLTS
1
2, 4
3
MARKING
DIAGRAMS
4
1
2
3
TO−220
CASE 221A
STYLE 6
AYWW
B40L45G
AKA
1
3
4 D2PAK 3
CASE 418B
STYLE 3
AY WW
B40L45G
AKA
B40L45
A
Y
WW
G
AKA
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Device
= Polarity Designator
ORDERING INFORMATION
Device
Package
MBR40L45CTG
TO−220
(Pb−Free)
NRVBB40L45CTT4G D2PAK 3
(Pb−Free)
Shipping
50 Units/Rail
800 /Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
MBR40L45CT/D


  ON Semiconductor Electronic Components Datasheet  

MBR40L45CTG Datasheet

Switch-mode Power Rectifier

No Preview Available !

MBR40L45CTG, NRVBB40L45CTT4G
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC = 145°C
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz)
Non-repetitive Peak Surge Current
(Surge applied at rated load conditions half-wave, single phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
45
20
40
200
V
A
A
A
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated VR)
ESD Ratings: Machine Model = C
Human Body Model = 3B
TJ
Tstg
dv/dt
−65 to +175
−65 to +175
10,000
> 400
> 8000
°C
°C
V/ms
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance
Junction−to−Case
Junction−to−Ambient
Symbol
RqJC
RqJA
Value
1.9
72.9
Unit
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 20 A, TC = 25°C)
(IF = 20 A, TC = 125°C)
(IF = 40 A, TC = 25°C)
(IF = 40 A, TC = 125°C)
vF V
0.50
0.48
0.63
0.68
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC = 25°C)
(Rated DC Voltage, TC = 125°C)
iR mA
1.2
275
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
www.onsemi.com
2


Part Number MBR40L45CTG
Description Switch-mode Power Rectifier
Maker ON Semiconductor
Total Page 6 Pages
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