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MBR5025L - Power Rectifier

Key Features

  • Very Low Forward Voltage Drop (Max 0.58 V @ 100°C).
  • Guardring for Stress Protection and High dv/dt Capability (> 10 V/ns).
  • 150°C Operating Junction Temperature.
  • Specially Designed for.

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Datasheet Details

Part number MBR5025L
Manufacturer onsemi
File Size 107.60 KB
Description Power Rectifier
Datasheet download datasheet MBR5025L Datasheet

Full PDF Text Transcription for MBR5025L (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MBR5025L. For precise diagrams, and layout, please refer to the original PDF.

MBR5025L Preferred Device SWITCHMODE™ Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This...

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of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Very Low Forward Voltage Drop (Max 0.58 V @ 100°C) • Guardring for Stress Protection and High dv/dt Capability (> 10 V/ns) • 150°C Operating Junction Temperature • Specially Designed for SWITCHMODE Power Supplies with Operating Frequency up to 300 kHz Mechanical Characteristics • Case: Epoxy, Molded • Weight: 4.3 grams (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max.