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  ON Semiconductor Electronic Components Datasheet  

MBR6045WT Datasheet

Power Rectifier

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MBR6045WT
SWITCHMODEt
Power Rectifier
The SWITCHMODE power rectifier employs the use of the
Schottky Barrier principle with a Platinum barrier metal.
Features
Dual Diode Construction; Terminals 1 and 3 May Be Connected for
Parallel Operation at Full Rating
45 V Blocking Voltage
Low Forward Voltage Drop
Guardring for Stress Protection and High dv/dt Capability (> 10 V/ns)
175°C Operating Junction Temperature
PbFree Package is Available*
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 4.3 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 125°C)
Per Diode
Per Device
Peak Repetitive Forward Current,
(Rated VR, Square Wave,
20 kHz, TC = 90°C)
Per Diode
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Peak Repetitive Reverse Current
(2.0 ms, 1.0 kHz)
Storage Temperature Range
Operating Junction Temperature (Note 1)
Peak Surge Junction Temperature
(Forward Current Applied)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
IRRM
Tstg
TJ
TJ(pk)
45
30
60
60
500
2.0
65 to +175
65 to +175
175
V
A
A
A
A
°C
°C
°C
Voltage Rate of Change
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
JunctiontoAmbient: dPD/dTJ < 1/RqJA.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
60 AMPERES, 45 VOLTS
1
2, 4
3
1
23
TO247
CASE 340L
STYLE 2
MARKING DIAGRAM
MBR6045WT
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
MBR6045WT
MBR6045WTG
Package
TO247
TO247
(PbFree)
Shipping
30 Units/Rail
30 Units/Rail
© Semiconductor Components Industries, LLC, 2010
March, 2010 Rev. 9
1
Publication Order Number:
MBR6045WT/D


  ON Semiconductor Electronic Components Datasheet  

MBR6045WT Datasheet

Power Rectifier

No Preview Available !

MBR6045WT
THERMAL CHARACTERISTICS (Per Diode)
Rating
Thermal Resistance, JunctiontoCase
ELECTRICAL CHARACTERISTICS (Per Diode)
Instantaneous Forward Voltage (Note 2)
@ IF = 30 Amps, TC = 25°C
@ IF = 30 Amps, TC = 125°C
@ IF = 60 Amps, TC = 25°C
Instantaneous Reverse Current (Note 2)
@ Rated DC Voltage, TC = 25°C
@ Rated DC Voltage, TC = 100°C
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle < 2.0%
Symbol
RqJC
VF
IR
Max Unit
1.0 °C/W
Volts
0.62
0.55
0.75
mA
1.0
50
TYPICAL ELECTRICAL CHARACTERISTICS
1000
100
10
1
0.1
0.01
0
TC = 150°C
TC = 100°C
TC = 25°C
10 20 30 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Reverse Current
100
10
150°C
100°C TC = 25°C
1
50 100 200 300 400 500
600 700 800
vF, INSTANTANEOUS FORWARD VOLTAGE (mV)
Figure 2. Typical Forward Voltage
http://onsemi.com
2


Part Number MBR6045WT
Description Power Rectifier
Maker ON Semiconductor
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MBR6045WT Datasheet PDF






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