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  ON Semiconductor Electronic Components Datasheet  

MBR6045WTG Datasheet

Switch Mode Power Rectifier

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MBR6045WTG
Switch Mode
Power Rectifier
The Switch Mode power rectifier employs the use of the Schottky
Barrier principle with a Platinum barrier metal.
Features
Dual Diode Construction; Terminals 1 and 3 May Be Connected for
Parallel Operation at Full Rating
45 V Blocking Voltage
Low Forward Voltage Drop
Guard−ring for Stress Protection and High dv/dt Capability (> 10 V/ns)
175°C Operating Junction Temperature
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 4.3 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 125°C)
Per Diode
Per Device
Peak Repetitive Forward Current,
(Rated VR, Square Wave,
20 kHz, TC = 90°C)
Per Diode
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Peak Repetitive Reverse Current
(2.0 ms, 1.0 kHz)
Storage Temperature Range
Operating Junction Temperature (Note 1)
Peak Surge Junction Temperature
(Forward Current Applied)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
IRRM
Tstg
TJ
TJ(pk)
45
30
60
60
500
2.0
−65 to +175
−65 to +175
175
V
A
A
A
A
°C
°C
°C
Voltage Rate of Change
dv/dt
10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
60 AMPERES, 45 VOLTS
1
2, 4
3
1
2
3
TO−247
CASE 340AL
MARKING DIAGRAM
MBR6045WT
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
MBR6045WTG
Package
TO−247
(Pb−Free)
Shipping
30 Units/Rail
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 10
1
Publication Order Number:
MBR6045WT/D


  ON Semiconductor Electronic Components Datasheet  

MBR6045WTG Datasheet

Switch Mode Power Rectifier

No Preview Available !

MBR6045WTG
THERMAL CHARACTERISTICS (Per Diode)
Rating
Symbol
Max Unit
Thermal Resistance, Junction−to−Case
RqJC
1.0 °C/W
ELECTRICAL CHARACTERISTICS (Per Diode)
Instantaneous Forward Voltage (Note 2)
@ IF = 30 Amps, TC = 25°C
@ IF = 30 Amps, TC = 125°C
@ IF = 60 Amps, TC = 25°C
VF Volts
0.62
0.55
0.75
Instantaneous Reverse Current (Note 2)
@ Rated DC Voltage, TC = 25°C
@ Rated DC Voltage, TC = 100°C
IR mA
1.0
50
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle < 2.0%
TYPICAL ELECTRICAL CHARACTERISTICS
1000
100
10
1
0.1
0.01
0
TC = 150°C
TC = 100°C
TC = 25°C
10 20 30 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Reverse Current
100
10
150°C
100°C TC = 25°C
1
50 100 200 300 400 500
600 700 800
vF, INSTANTANEOUS FORWARD VOLTAGE (mV)
Figure 2. Typical Forward Voltage
http://onsemi.com
2


Part Number MBR6045WTG
Description Switch Mode Power Rectifier
Maker ON Semiconductor
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