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  ON Semiconductor Electronic Components Datasheet  

MBR60H100CT Datasheet

Power Rectifier

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MBR60H100CT,
MBRB60H100CT
SWITCHMODE
Power Rectifier
100 V, 60 A
Features and Benefits
Low Forward Voltage: 0.72 V @ 125°C
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
60 A Total (30 A Per Diode Leg)
PbFree Package is Available
Applications
Power Supply Output Rectification
Power Management
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets UL 94 V0 @ 0.125 in
Weight (Approximately): 1.9 Grams (TO220)
1.7 Grams (D2PAK)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
ESD Rating: Human Body Model = 3B
Machine Model = C
MAXIMUM RATINGS
Please See the Table on the Following Page
© Semiconductor Components Industries, LLC, 2008
June, 2008 Rev. 3
1
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
60 AMPERES, 100 VOLTS
1
2, 4
3
4 MARKING
DIAGRAM
1 23
1
3
TO220AB
CASE 221A
PLASTIC
AYWW
B60H100G
AKA
4 D2PAK
CASE 418B
STYLE 3
AYWW
B60H100G
AKA
A = Assembly Location
Y = Year
WW = Work Week
B60H100 = Device Code
G = PbFree Package
AKA
= Polarity Designator
ORDERING INFORMATION
Device
Package Shipping
MBR60H100CT
TO220 50 Units/Rail
MBR60H100CTG
TO220 50 Units/Rail
(PbFree)
MBRB60H100CTT4G D2PAK
(PbFree)
800/
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MBR60H100CT/D


  ON Semiconductor Electronic Components Datasheet  

MBR60H100CT Datasheet

Power Rectifier

No Preview Available !

MBR60H100CT, MBRB60H100CT
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(TC = 155°C)
Per Diode
Per Device
VRRM
VRWM
VR
IF(AV)
100
30
60
V
A
Peak Repetitive Forward Current
(Square Wave, 20 kHz, TC = 151°C)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFRM 60 A
IFSM 350 A
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated VR)
Controlled Avalanche Energy (see test conditions in Figures 9 and 10)
ESD Ratings: Machine Model = C
Human Body Model = 3B
TJ
Tstg
dv/dt
WAVAL
+175
*65 to +175
10,000
400
> 400
> 8000
°C
°C
V/ms
mJ
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Thermal Resistance JunctiontoCase (Min. Pad)
JunctiontoAmbient (Min. Pad)
RqJC
RqJA
1.0 °C/W
70
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Characteristic
Symbol
Min
Typ
Max Unit
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 30 A, TJ = 25°C)
(iF = 30 A, TJ = 125°C)
(iF = 60 A, TJ = 25°C)
(iF = 60 A, TJ = 125°C)
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TJ = 125°C)
(Rated DC Voltage, TJ = 25°C)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
vF V
0.80 0.84
0.68 0.72
0.93 0.98
0.81 0.84
iR mA
2.0 10
0.0013
0.01
http://onsemi.com
2


Part Number MBR60H100CT
Description Power Rectifier
Maker ON Semiconductor
Total Page 7 Pages
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