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MBR60H100CT Datasheet

SWITCHMODE Power Rectifier

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MBR60H100CT
SWITCHMODE
Power Rectifier
100 V, 60 A
Features and Benefits
Low Forward Voltage: 0.72 V @ 125°C
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
60 A Total (30 A Per Diode Leg)
Pb−Free Package is Available
Applications
Power Supply − Output Rectification
Power Management
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
ESD Rating: Human Body Model = 3B
Machine Model = C
MAXIMUM RATINGS
Please See the Table on the Following Page
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
60 AMPERES
100 VOLTS
1
2, 4
3
4 MARKING
DIAGRAM
1
2
3
TO−220AB
CASE 221A
PLASTIC
AYWW
B60H100G
AKA
A = Assembly Location
Y = Year
WW = Work Week
B60H100 = Device Code
G = Pb−Free Package
AKA = Polarity Designator
ORDERING INFORMATION
Device
Package
Shipping
MBR60H100CT
TO−220
50 Units/Rail
MBR60H100CTG TO−220
(Pb−Free)
50 Units/Rail
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 1
1
Publication Order Number:
MBR60H100CT/D


  ON Semiconductor Electronic Components Datasheet  

MBR60H100CT Datasheet

SWITCHMODE Power Rectifier

No Preview Available !

MBR60H100CT
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(TC = 155°C)
Per Diode
Per Device
VRRM
VRWM
VR
IF(AV)
100
30
60
V
A
Peak Repetitive Forward Current
(Square Wave, 20 kHz, TC = 151°C)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFRM 60 A
IFSM 350 A
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated VR)
Controlled Avalanche Energy (see test conditions in Figures 9 and 10)
TJ
Tstg
dv/dt
WAVAL
+175
*65 to +175
10,000
400
°C
°C
V/ms
mJ
ESD Ratings: Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance − Junction−to−Case (Min. Pad)
− Junction−to−Ambient (Min. Pad)
Symbol
RqJC
RqJA
Value
1.0
70
Unit
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 30 A, TJ = 25°C)
(iF = 30 A, TJ = 125°C)
(iF = 60 A, TJ = 25°C)
(iF = 60 A, TJ = 125°C)
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TJ = 125°C)
(Rated DC Voltage, TJ = 25°C)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
Symbol
vF
iR
Min
Typ
0.80
0.68
0.93
0.81
2.0
0.0013
Max Unit
V
0.84
0.72
0.98
0.84
mA
10
0.01
http://onsemi.com
2


Part Number MBR60H100CT
Description SWITCHMODE Power Rectifier
Maker ON Semiconductor
Total Page 6 Pages
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