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  ON Semiconductor Electronic Components Datasheet  

MBR60H100CTG Datasheet

Switch-mode Power Rectifier

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MBR60H100CTG,
MBRB60H100CTT4G,
NRVBB60H100CTT4G
Switch-mode
Power Rectifier
100 V, 60 A
Features and Benefits
Low Forward Voltage: 0.72 V @ 125°C
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
60 A Total (30 A Per Diode Leg)
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Applications
Power Supply − Output Rectification
Power Management
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight (Approximately): 1.9 Grams (TO−220)
1.7 Grams (D2PAK−3)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
ESD Rating: Human Body Model = 3B
Machine Model = C
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 6
1
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIER
60 AMPERES, 100 VOLTS
1
2, 4
3
4 MARKING
DIAGRAM
1
2
3
TO−220
CASE 221A
STYLE 6
AYWW
B60H100G
AKA
D2PAK−3
CASE 418B
STYLE 3
AYWW
B60H100G
AKA
A = Assembly Location
Y = Year
WW = Work Week
B60H100 = Device Code
G = Pb−Free Package
AKA = Polarity Designator
ORDERING INFORMATION
Device
Package Shipping
MBR60H100CTG
TO−220 50 Units/Rail
(Pb−Free)
MBRB60H100CTT4G D2PAK−3
800/
(Pb−Free) Tape & Reel
NRVBB60H100CTT4G D2PAK−3
800/
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MBR60H100CT/D


  ON Semiconductor Electronic Components Datasheet  

MBR60H100CTG Datasheet

Switch-mode Power Rectifier

No Preview Available !

MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(TC = 155°C)
Per Diode
Per Device
VRRM
VRWM
VR
IF(AV)
100
30
60
V
A
Peak Repetitive Forward Current
(Square Wave, 20 kHz, TC = 151°C)
IFRM 60 A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM 350 A
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated VR)
Controlled Avalanche Energy (see test conditions in Figures 9 and 10)
ESD Ratings: Machine Model = C
Human Body Model = 3B
TJ
Tstg
dv/dt
WAVAL
+175
*65 to +175
10,000
400
> 400
> 8000
°C
°C
V/ms
mJ
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance
Junction−to−Case (Min. Pad)
Junction−to−Ambient (Min. Pad)
Symbol
RqJC
RqJA
Value
1.0
70
Unit
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Characteristic
Symbol
Min
Typ
Max Unit
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 30 A, TJ = 25°C)
(iF = 30 A, TJ = 125°C)
(iF = 60 A, TJ = 25°C)
(iF = 60 A, TJ = 125°C)
vF V
− 0.80 0.84
− 0.68 0.72
− 0.93 0.98
− 0.81 0.84
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TJ = 125°C)
(Rated DC Voltage, TJ = 25°C)
iR mA
− 2.0 10
0.0013
0.01
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
www.onsemi.com
2


Part Number MBR60H100CTG
Description Switch-mode Power Rectifier
Maker ON Semiconductor
Total Page 7 Pages
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