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  ON Semiconductor Electronic Components Datasheet  

MBRB4030 Datasheet

Power Rectifier

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MBRB4030
Preferred Device
SWITCHMODEt
Power Rectifier
These state−of−the−art devices use the Schottky Barrier principle
with a proprietary barrier metal.
Features
Guardring for Stress Protection
Maximum Die Size
175°C Operating Junction Temperature
Short Heat Sink Tab Manufactured − Not Sheared
Pb−Free Packages are Available
Mechanical Characteristics:
Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
Weight: 1.7 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads Readily Solderable
Device Meets MSL1 Requirements
ESD Ratings: Machine Model, C (>400 V)
Human Body Model, 3B (>8000 V)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR) TC = +115°C (Note 1)
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz),
TC = +112°C
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
30
40
80
300
V
A
A
A
Peak Repetitive Reverse Surge Current
(2.0 ms, 1.0 kHz)
IRRM
2.0
A
Storage Temperature Range
Operating Junction Temperature Range
(Note 2)
Tstg −65 to +175 °C
TJ −65 to +175 °C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Reverse Energy (Unclamped Inductive
Surge), (TC = 25°C, L = 3.0 mH)
W
600 mJ
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Rating applies when pins 1 and 3 are connected.
2. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
40 AMPERES, 30 VOLTS
1
4
3
4
1
3
D2PAK
CASE 418B
STYLE 3
MARKING DIAGRAM
AY WW
B4030G
AKA
A
Y
WW
B4030
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Diode Polarity
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
September, 2006 − Rev. 6
1
Publication Order Number:
MBRB4030/D


  ON Semiconductor Electronic Components Datasheet  

MBRB4030 Datasheet

Power Rectifier

No Preview Available !

MBRB4030
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient (Note 4)
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Notes 3 and 5), per Device
(IF = 20 A, TC = + 25°C)
(IF = 20 A, TC = +150°C)
(IF = 40 A, TC = + 25°C)
(IF = 40 A, TC = +150°C)
Maximum Instantaneous Reverse Current (Note 5), per Device
(Rated DC Voltage, TC = + 25°C)
(Rated DC Voltage, TC = +125°C)
3. Rating applies when pins 1 and 3 are connected.
4. Rating applies when surface mounted on the miniumum pad size recommended.
5. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%
Symbol
RqJC
RqJA
Symbol
VF
IR
Value
1.0
50
Value
0.46
0.34
0.55
0.45
0.35
150
Unit
°C/W
°C/W
Unit
V
mA
ORDERING INFORMATION
MBRB4030
Device
Package
D2PAK
Shipping
50 Units / Rail
MBRB4030G
D2PAK
(Pb−Free)
50 Units / Rail
MBRB4030T4
D2PAK
800 Units / Tape & Reel
MBRB4030T4G
D2PAK
(Pb−Free)
800 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2


Part Number MBRB4030
Description Power Rectifier
Maker ON Semiconductor
Total Page 6 Pages
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