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  ON Semiconductor Electronic Components Datasheet  

MBRB4030G Datasheet

SWITCHMODE Power Rectifier

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MBRB4030G,
NRVBB4030T4G
Preferred Device
SWITCHMODE
Power Rectifier
These stateoftheart devices use the Schottky Barrier principle
with a proprietary barrier metal.
Features
Guardring for Stress Protection
Maximum Die Size
175C Operating Junction Temperature
Short Heat Sink Tab Manufactured Not Sheared
AECQ101 Qualified and PPAP Capable
NRVBB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are PbFree*
Mechanical Characteristics:
Case: Epoxy, Molded, Epoxy Meets UL 94 V0
Weight: 1.7 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads Readily Solderable
Device Meets MSL1 Requirements
ESD Ratings:
Machine Model = C (> 400 V)
Human Body Model = 3B (> 8000 V)
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
40 AMPERES, 30 VOLTS
D2PAK
CASE 418B
STYLE 3
1
4
3
MARKING DIAGRAM
AY WW
B4030G
AKA
A
Y
WW
B4030
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= PbFree Package
= Diode Polarity
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
January, 2012 Rev. 7
1
Publication Order Number:
MBRB4030/D


  ON Semiconductor Electronic Components Datasheet  

MBRB4030G Datasheet

SWITCHMODE Power Rectifier

No Preview Available !

MBRB4030G, NRVBB4030T4G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR) TC = +115C (Note 1)
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz), TC = +112C
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
30
40
80
300
V
A
A
A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
IRRM
2.0
A
Storage Temperature Range
Tstg 65 to +175
C
Operating Junction Temperature Range (Note 2)
TJ 65 to +175 C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Reverse Energy (Unclamped Inductive Surge), (TC = 25C, L = 3.0 mH)
W 600 mJ
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Rating applies when pins 1 and 3 are connected.
2. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, JunctiontoCase
RqJC 1.0 C/W
Thermal Resistance, JunctiontoAmbient (Note 3)
RqJA 50 C/W
3. Rating applies when surface mounted on the miniumum pad size recommended.
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Notes 4 and 5), per Device
(IF = 20 A, TC = + 25C)
(IF = 20 A, TC = +150C)
(IF = 40 A, TC = + 25C)
(IF = 40 A, TC = +150C)
Maximum Instantaneous Reverse Current (Note 5), per Device
(Rated DC Voltage, TC = + 25C)
(Rated DC Voltage, TC = +125C)
4. Rating applies when pins 1 and 3 are connected.
5. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%
Symbol
VF
IR
Value
0.46
0.34
0.55
0.45
0.35
150
Unit
V
mA
ORDERING INFORMATION
MBRB4030G
Device
Package
D2PAK
(PbFree)
Shipping
50 Units / Rail
MBRB4030T4G
D2PAK
(PbFree)
800 Units / Tape & Reel
NRVBB4030T4G
D2PAK
(PbFree)
800 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2


Part Number MBRB4030G
Description SWITCHMODE Power Rectifier
Maker ON Semiconductor
Total Page 6 Pages
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