Full PDF Text Transcription for MBRF1545CT (Reference)
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MBRF1545CT. For precise diagrams, and layout, please refer to the original PDF.
MBRF1545CT SWITCHMODE™ Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−...
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Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency switching power supplies, free wheeling diodes and polarity protection diodes. • Highly Stable Oxide Passivated Junction • Very Low Forward Voltage Drop • Matched Dual Die Construction • High Junction Temperature Capability • High dv/dt Capability • Excellent Ability to Withstand Reverse Avalanche Energy Transients • Guardring for Stress Protection • Epoxy Meets UL94, VO at 1/8″ • E
MBRF1545CT Datasheet
