Full PDF Text Transcription for MBRF20100CTG (Reference)
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DATA SHEET www.onsemi.com Switch-mode Schottky Power Rectifier MBRF20100CTG The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−t...
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ctifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency switching power supplies, free wheeling diodes and polarity protection diodes. Features • Highly Stable Oxide Passivated Junction • Very Low Forward Voltage Drop • Matched Dual Die Construction • High Junction Temperature Capability • High dv/dt Capability • Excellent Ability to Withstand Reverse Avalanche Energy Transients • Guardring for Stress Protect
MBRF20100CTG Datasheet
