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  ON Semiconductor Electronic Components Datasheet  

MBRF20H150CTG Datasheet

Power Rectifier

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MBRF20H150CTG,
MBR20H150CTG
Switch-mode
Power Rectifier
150 V, 20 A
Features and Benefits
Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capability
20 A Total (10 A Per Diode Leg)
Guard−Ring for Stress Protection
These Devices are Pb−Free and are RoHS Compliant
Applications
Power Supply − Output Rectification
Power Management
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight (Approximately): 1.9 Grams (TO−220 & TO−220FP)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 150 VOLTS
1
2, 4
3
4
1
2
3
TO−220 FULLPAK]
CASE 221AH
1
2
3
TO−220
CASE 221A
STYLE 6
MARKING DIAGRAMS
© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. 4
AYWW
B20H150G
AKA
AYWW
B20H150G
AKA
TO−220
TO−220FP
A = Assembly Location
Y = Year
WW = Work Week
B20H150 = Device Code
G = Pb−Free Device
AKA = Polarity Designator
ORDERING INFORMATION
See detailed ordering and shipping information on page 1 of
this data sheet.
1 Publication Order Number:
MBRF20H150CT/D


  ON Semiconductor Electronic Components Datasheet  

MBRF20H150CTG Datasheet

Power Rectifier

No Preview Available !

MBRF20H150CTG, MBR20H150CTG
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC = 134°C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
(Per Leg)
(Per Device)
VRRM
VRWM
VR
IF(AV)
IFSM
150
10
20
180
V
A
A
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated VR)
ESD Ratings:
Machine Model = C
Human Body Model = 3B
TJ
Tstg
dv/dt
−20 to +150
−65 to +150
10,000
> 400
> 8000
°C
°C
V/ms
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Maximum Thermal Resistance
(MBR20H150CTG)
(MBRF20H150CTG)
Rating
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Case
Symbol
RqJC
RqJA
RqJC
Value
2.0
45
2.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Rating
Symbol
Typ
Max Unit
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 5 A, TC = 25°C)
(IF = 5 A, TC = 125°C)
(IF = 10 A, TC = 25°C)
(IF = 10 A, TC = 125°C)
vF
V
0.72
0.57 0.60
0.87
0.65 0.68
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC = 25°C)
(Rated DC Voltage, TC = 125°C)
iR
50 mA
30 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
ORDERING INFORMATION
Device Order Number
MBRF20H150CTG
MBR20H150CTG
Package Type
TO−220FP
(Pb−Free)
TO−220
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
www.onsemi.com
2


Part Number MBRF20H150CTG
Description Power Rectifier
Maker ON Semiconductor
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MBRF20H150CTG Datasheet PDF






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