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  ON Semiconductor Electronic Components Datasheet  

MBRF30L60CTG Datasheet

Switch-mode Power Rectifier

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MBR30L60CTG,
MBRF30L60CTG
Switch-mode
Power Rectifier
60 V, 30 A
Features and Benefits
Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capability
30 A Total (15 A Per Diode Leg)
Guard−Ring for Stress Protection
These Devices are Pb−Free and are RoHS Compliant
Applications
Power Supply − Output Rectification
Power Management
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight (Approximately): 1.9 Grams (TO−220 & TO−220FP)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIER
30 AMPERES, 60 VOLTS
1
2, 4
3
MARKING
4 DIAGRAMS
1
2
3
TO−220
CASE 221A
STYLE 6
AYWW
B30L60G
AKA
1
2
3
TO−220 FULLPAK]
CASE 221AH
AYWW
B30L60G
AKA
A
Y
WW
B30L60
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Device
= Polarity Designator
© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. 2
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1 Publication Order Number:
MBR30L60CT/D


  ON Semiconductor Electronic Components Datasheet  

MBRF30L60CTG Datasheet

Switch-mode Power Rectifier

No Preview Available !

MBR30L60CTG, MBRF30L60CTG
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
MBR30L60CTG (Rated VR) TC = 133°C
MBRF30L60CTG (Rated VR) TC = 108°C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
(Per Leg)
(Per Device)
(Per Device)
VRRM
VRWM
VR
IF(AV)
IFSM
60
15
30
240
V
A
A
Operating Junction Temperature (Note 1)
Storage Temperature
ESD Ratings:
Machine Model = C
Human Body Model = 3B
TJ
−55 to +150
°C
Tstg
−65 to +175
°C
> 400
> 8000
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance
MBR30L60CTG
MBRF30L60CTG
Junction−to−Case
Junction−to−Ambient
Junction−to−Case
Junction−to−Ambient
Symbol
RqJC
RqJA
RqJC
RqJA
Value
2.1
70
5.0
75
Unit
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Characteristic
Symbol
Typ
Max Unit
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 15 A, TC = 25°C)
(IF = 15 A, TC = 125°C)
(IF = 30 A, TC = 25°C)
(IF = 30 A, TC = 125°C)
vF
V
0.57 0.62
0.53 0.57
0.75 0.81
0.70 0.73
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC = 25°C)
(Rated DC Voltage, TC = 125°C)
iR
137 350 mA
62 110 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
DEVICE ORDERING INFORMATION
Device Order Number
MBR30L60CTG
MBRF30L60CTG
Package Type
TO−220
(Pb−Free)
TO−220FP
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
www.onsemi.com
2


Part Number MBRF30L60CTG
Description Switch-mode Power Rectifier
Maker ON Semiconductor
Total Page 7 Pages
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