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  ON Semiconductor Electronic Components Datasheet  

MBRM130LT3G Datasheet

Surface Mount Schottky Power Rectifier

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MBRM130LT1G,
NRVBM130LT1G,
MBRM130LT3G,
NRVBM130LT3G
Surface Mount
Schottky Power Rectifier
POWERMITE
Power Surface Mount Package
The SchottkyPOWERMITEemploys the Schottky Barrier
principle with a barrier metal and epitaxial construction that produces
optimal forward voltage dropreverse current tradeoff. The advanced
packaging techniques provide for a highly efficient micro miniature,
space saving surface mount Rectifier. With its unique heatsink design,
thePOWERMITEhas the same thermal performance as the SMA
while being 50% smaller in footprint area, and delivering one of the
lowest height profiles, 1.1 mm in the industry. Because of its small
size, it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are ACDC and
DCDC converters, reverse battery protection, and “ORing” of
multiple supply voltages and any other application where performance
and size are critical.
Features
Low Profile Maximum Height of 1.1 mm
Small Footprint Footprint Area of 8.45 mm2
Low VF Provides Higher Efficiency and Extends Battery Life
Supplied in 12 mm Tape and Reel
Low Thermal Resistance with Direct Thermal Path of Die on
Exposed Cathode Heat Sink
ESD Ratings:
Human Body Model = 3B (> 16 kV)
Machine Model = C (> 400 V)
AECQ101 Qualified and PPAP Capable
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are PbFree*
Mechanical Characteristics:
POWERMITEis JEDEC Registered as D0216AA
Case: Molded Epoxy
Epoxy Meets UL 94 V0 @ 0.125 in
Weight: 16.3 mg (Approximately)
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Maximum for 10 Seconds
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
January, 2012 Rev. 5
1
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES, 30 VOLTS
CATHODE
ANODE
POWERMITE
CASE 457
PLASTIC
MARKING DIAGRAM
1
M
BCGG
2
M = Date Code
BCG = Device Code
G = PbFree Package
ORDERING INFORMATION
Device
Package
Shipping
MBRM130LT1G
NRVBM130LT1G
POWERMITE
(PbFree)
POWERMITE
(PbFree)
3,000 /
Tape & Reel
3,000 /
Tape & Reel
MBRM130LT3G
POWERMITE 12,000 /
(PbFree) Tape & Reel
NRVBM130LT3G
POWERMITE 12,000 /
(PbFree) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MBRM130L/D


  ON Semiconductor Electronic Components Datasheet  

MBRM130LT3G Datasheet

Surface Mount Schottky Power Rectifier

No Preview Available !

MBRM130LT1G, NRVBM130LT1G, MBRM130LT3G, NRVBM130LT3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TC = 135C)
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 100 kHz, TC = 135C)
NonRepetitive Peak Surge Current
(NonRepetitive peak surge current, halfwave, single phase, 60 Hz)
VRRM
VRWM
VR
IO
IFRM
IFSM
30
1.0
2.0
50
V
A
A
A
Storage Temperature
Tstg 55 to 150
C
Operating Junction Temperature
TJ 55 to 125 C
Voltage Rate of Change
(Rated VR, TJ = 25C)
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, JunctiontoLead (Anode) (Note 1)
Thermal Resistance, JunctiontoTab (Cathode) (Note 1)
Thermal Resistance, JunctiontoAmbient (Note 1)
1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 & 10
Symbol
Rtjl
Rtjtab
Rtja
Value
35
23
277
Unit
C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 2), See Figure 2
(IF = 0.1 A)
(IF = 1.0 A)
(IF = 3.0 A)
Maximum Instantaneous Reverse Current (Note 2), See Figure 4
(VR = 30 V)
(VR = 20 V)
(VR = 10 V)
2. Pulse Test: Pulse Width 250 ms, Duty Cycle 2%
Symbol
VF
IR
Value
TJ = 25C
0.30
0.38
0.52
TJ = 85C
0.20
0.33
0.50
TJ = 25C
0.41
0.13
0.05
TJ = 85C
11
5.3
3.2
Unit
V
mA
10 10
TJ = 150C
1.0 TJ = 125C
TJ = 85C
TJ = 25C
0.1
0
TJ = 40C
0.1 0.2 0.3 0.4 0.5 0.6
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
TJ = 150C
1.0
TJ = 125C
TJ = 85C
TJ = 25C
0.1
0
0.1 0.2
TJ = 40C
0.3 0.4 0.5 0.6
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
(VOLTS)
Figure 2. Maximum Forward Voltage
http://onsemi.com
2


Part Number MBRM130LT3G
Description Surface Mount Schottky Power Rectifier
Maker ON Semiconductor
Total Page 5 Pages
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