epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes.
Very Low Forward Voltage Drop.
Highly Stable Oxide Passivated Junction.
Guardring for Stress Protection.
High dv/dt Capability
Mechanical Characteristics:.
Dual Die Construction.
Case: Epoxy, Molded with Plated Copper Heatsink Base.
Full PDF Text Transcription for MBRP30035L (Reference)
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MBRP30035L. For precise diagrams, and layout, please refer to the original PDF.
MBRP30035L SWITCHMODE™ Schottky Power Rectifier POWERTAPE III Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State o...
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arrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes.
MBRP30035L Datasheet
