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  ON Semiconductor Electronic Components Datasheet  

MBRS3100T3G Datasheet

Surface Mount Schottky Power Rectifier

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MBRS3100T3G,
NRVBS3100T3G
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metaltosilicon power diode. Stateoftheart geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the system.
Features
Small Compact Surface Mountable Package with JBend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Excellent Ability to Withstand Reverse Avalanche Energy Transients
GuardRing for Stress Protection
AECQ101 Qualified and PPAP Capable
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are PbFree*
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 217 mg (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Max. for 10 Seconds
Polarity: Notch in Plastic Body Indicates Cathode Lead
ESD Ratings:
Machine Model = C
Human Body Model = 3B
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES, 100 VOLTS
SMC
CASE 403
MARKING DIAGRAM
AYWW
B310G
G
B310
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
MBRS3100T3G
SMC
(PbFree)
2,500 /
Tape & Reel
NRVBS3100T3G
SMC
(PbFree)
2,500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
January, 2012 Rev. 4
1
Publication Order Number:
MBRS3100T3/D


  ON Semiconductor Electronic Components Datasheet  

MBRS3100T3G Datasheet

Surface Mount Schottky Power Rectifier

No Preview Available !

MBRS3100T3G, NRVBS3100T3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TL = 100C)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFSM
100
3.0
130
V
A
A
Operating Junction Temperature Range (Note 1)
TJ 65 to +175 C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, JunctiontoLead
Symbol
RqJL
Value
11
Unit
C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 3.0 A, TJ = 25C)
(iF = 6.0 A, TJ = 25C)
(iF = 3.0 A, TJ = 125C)
(iF = 6.0 A, TJ = 125C)
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 25C)
(Rated dc Voltage, TJ = 125C)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
Symbol
VF
iR
Value
0.79
0.90
0.62
0.70
0.05
5.0
Unit
V
mA
http://onsemi.com
2


Part Number MBRS3100T3G
Description Surface Mount Schottky Power Rectifier
Maker ON Semiconductor
Total Page 4 Pages
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