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  ON Semiconductor Electronic Components Datasheet  

MBRS410ET3 Datasheet

Surface Mount Schottky Power Rectifier

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MBRS410ET3 pdf
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MBRS410ET3
Preferred Device
Surface Mount
Schottky Power Rectifier
. . . employing the Schottky Barrier principle in a large area
metal–to–silicon power diode. State–of–the–art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the system.
Typical applications are ac/dc and dc–dc converters, reverse battery
protection, and “Oring” of multiple supply voltages and any other
application where performance and size are critical.
Very Low VF Accompanied by Low IR
1st in the Market Place with a 10 VR Schottky Rectifier
Small Compact Surface Mountable Package with J–Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Designed for Low Leakage
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guardring for Stress Protection
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 217 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped in 16 mm Tape and Reel, 2500 units per reel
Polarity: Notch in Plastic Body Indicates Cathode Lead
ESD Ratings: Machine Model = C
ESD Ratings: Human Body Model = 3B
Marking: B4E1
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(@ TL = 130°C)
Non–Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Operating Junction Temperature
Symbol
VRRM
VRWM
VR
IO
Value
10
4.0
IFSM
250
TJ –65 to
+150
Unit
V
A
A
°C
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
4.0 AMPERES
10 VOLTS
SMC
CASE 403
PLASTIC
MARKING DIAGRAM
YWW
B4E1
Y = Year
WW = Work Week
B4E1= Device Code
ORDERING INFORMATION
Device
Package
Shipping
MBRS410ET3
SMC
2500/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2001
September, 2001 – Rev. 1
1
Publication Order Number:
MBRS410ET3/D


  ON Semiconductor Electronic Components Datasheet  

MBRS410ET3 Datasheet

Surface Mount Schottky Power Rectifier

No Preview Available !

MBRS410ET3 pdf
MBRS410ET3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance – Junction–to–Lead
Thermal Resistance – Junction–to–Ambient
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 2.0 A)
(IF = 4.0 A)
(IF = 8.0 A)
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, VR = 5.0 V)
(Rated dc Voltage, VR = 10 V)
1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
2. Mounted with Minimum Recommended Pad Size, PC Board FR4.
Symbol
RθJL
RθJA
VF
IR
100
VF @ 125°C
10 100°C
75°C
25°C
–40°C
100
10
5 mm x 5 mm
(Note 2)
12
109
TJ = 25°C
0.475
0.500
0.525
TJ = 25°C
50
150
1 Inch x 1/2 inch
7.0
59
Unit
°C/W
TJ = 100°C
0.370
0.395
0.430
TJ = 100°C
2000
4000
V
mA
VF @ 125°C
100°C
75°C
25°C
11
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
0.1
0.1
0.2 0.3 0.4 0.5 0.6
VF, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
Figure 2. Maximum Forward Voltage
0.7
1.0E–02
1.0E–03
IR @ 125°C
100°C
10,000
25°C
f = 1 MHz
1.0E–04
75°C
1.0E–05
1.0E–06
1.0E–07
0
25°C
2468
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
1000
10 0
2468
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Typical Capacitance
10
http://onsemi.com
2


Part Number MBRS410ET3
Description Surface Mount Schottky Power Rectifier
Maker ON Semiconductor
Total Page 4 Pages
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