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  ON Semiconductor Electronic Components Datasheet  

MBRS410L Datasheet

Surface Mount Schottky Power Rectifier

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MBRS410L, NRVBS410L
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the system.
Typical applications are AC−DC and DC−DC converters, reverse
battery protection, and “ORing” of multiple supply voltages and any
other application where performance and size are critical.
Features
Ultra Low VF
1st in the Market Place with a 10 VR Schottky Rectifier
Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guard−Ring for Stress Protection
NRVBS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 217 mg (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Notch in Plastic Body Indicates Cathode Lead
ESD Ratings: Machine Model = C
Human Body Model = 3B
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(@ TL = 110°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IO
IFSM
10
4.0
150
V
A
A
Operating Junction Temperature
TJ −65 to +125 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
4.0 AMPERES, 10 VOLTS
SMC
CASE 403
MARKING DIAGRAM
AYWW
B4L1G
G
B4L1
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
MBRS410LT3G
SMC 2500 / Tape & Reel
(Pb−Free)
NRVBS410LT3G SMC 2500 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
February, 2016 − Rev. 4
1
Publication Order Number:
MBRS410LT3/D


  ON Semiconductor Electronic Components Datasheet  

MBRS410L Datasheet

Surface Mount Schottky Power Rectifier

No Preview Available !

MBRS410L, NRVBS410L
THERMAL CHARACTERISTICS
Characteristic
Symbol Min Pad (Note 2)
1 Inch Pad
Unit
Thermal Resistance,
Junction−to−Lead
Thermal Resistance,
Junction−to−Ambient
RqJL
RqJA
12
109
°C/W
7.0
59
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1)
VF TJ = 25°C
TJ = 100°C
V
(IF = 2.0 A)
(IF = 4.0 A)
(IF = 8.0 A)
0.31 0.200
0.33 0.225
0.35 0.250
Maximum Instantaneous Reverse Current (Note 1)
IR TJ = 25°C
TJ = 100°C
mA
(Rated dc Voltage, VR = 5.0 V)
(Rated dc Voltage, VR = 10 V)
2.0 100
5.0 200
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
2. Mounted with Minimum Recommended Pad Size, PC Board FR4.
100 100
VF @ 125°C
10
100°C
1
0.1
0
75°C 25°C
−40°C
0.1 0.2 0.3 0.4
VF, INSTANTANEOUS VOLTAGE (V)
Figure 1. Typical Forward Voltage
1.00E+00
1.00E−01
IR @ 125°C
100°C
1.00E−02
75°C
10 VF @ 125°C
1 100°C
75°C 25°C
0.1
0.5 0
10000
0.1 0.2 0.3 0.4
VF, INSTANTANEOUS VOLTAGE (V)
Figure 2. Maximum Forward Voltage
0.5
f = 1 Mhz
25°C
1.00E−03
1.00E−04
0
25°C
2468
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
1000
10 0
2468
VR, REVERSE VOLTAGE (V)
Figure 4. Typical Capacitance
10
www.onsemi.com
2


Part Number MBRS410L
Description Surface Mount Schottky Power Rectifier
Maker ON Semiconductor
Total Page 4 Pages
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