MBT3906DW1T1G Description
MBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium.
MBT3906DW1T1G Key Features
- hFE, 100-300 Low VCE(sat), ≤ 0.4 V Simplifies Circuit Design Reduces Board Space Reduces ponent Count Available in 8 mm,
- Emitter Voltage Collector
- Base Voltage Emitter
- Base Voltage Collector Current
- Continuous Electrostatic Discharge Symbol VCEO VCBO VEBO IC ESD Value -40 -40 -5.0 -200 Unit Vdc Vdc Vdc mAdc
- 55 to +150 Unit mW
- Rev. 3
- Emitter Breakdown Voltage (Note 2) Collector
- Base Breakdown Voltage Emitter
- Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX -40 -40 -5.0