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  ON Semiconductor Electronic Components Datasheet  

MBT3946DW1T1 Datasheet

Dual General Purpose Transistor

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MBT3946DW1T1
Dual General Purpose
Transistor
The MBT3946DW1T1 device is a spin−off of our popular
SOT−23/SOT−323 three−leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT−363−6
surface mount package. By putting two discrete devices in one
package, this device is ideal for low−power surface mount
applications where board space is at a premium.
hFE, 100−300
Low VCE(sat), 0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7−inch/3,000 Unit Tape and Reel
Device Marking: MBT3946DW1T1 = 46
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
(NPN)
(PNP)
Collector −Base Voltage
(NPN)
(PNP)
Emitter −Base Voltage
(NPN)
(PNP)
Collector Current − Continuous
(NPN)
(PNP)
Electrostatic Discharge
Symbol
VCEO
VCBO
VEBO
IC
ESD
Value
40
−40
60
−40
6.0
−5.0
200
−200
HBM>16000,
MM>2000
Unit
Vdc
Vdc
Vdc
mAdc
V
THERMAL CHARACTERISTICS
Characteristic
Total Package Dissipation (Note 1)
TA = 25°C
Thermal Resistance
Junction−to−Ambient
Junction and Storage
Temperature Range
Symbol
PD
RqJA
TJ, Tstg
Max
150
833
−55 to +150
Unit
mW
°C/W
°C
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
© Semiconductor Components Industries, LLC, 2004
January, 2004 − Rev. 2
1
http://onsemi.com
(3) (2) (1)
Q1 Q2
(4) (5)
(6)
MBT3946DW1T1*
*Q1 PNP
Q2 NPN
6 54
1
23
SOT−363−6/SC−88
CASE 419B
Style 1
MARKING
DIAGRAM
46d
46 = Specific Device Code
d = Date Code
ORDERING INFORMATION
Device
Package
Shipping
MBT3946DW1T1 SOT−363 3000/Tape & Reel
MBT3946DW1T1G SOT−363 3000/Tape & Reel
MBT3946DW1T2 SOT−363 3000/Tape & Reel
MBT3946DW1T2G SOT−363 3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MBT3946DW1T1/D


  ON Semiconductor Electronic Components Datasheet  

MBT3946DW1T1 Datasheet

Dual General Purpose Transistor

No Preview Available !

MBT3946DW1T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
(IC = 1.0 mAdc, IB = 0)
(IC = −1.0 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
(IC = −10 mAdc, IE = 0)
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
(IE = −10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = −30 Vdc, VEB = −3.0 Vdc)
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = −30 Vdc, VEB = −3.0 Vdc)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(NPN)
(IC = −0.1 mAdc, VCE = −1.0 Vdc)
(IC = −1.0 mAdc, VCE = −1.0 Vdc)
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −50 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
(PNP)
(NPN)
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
(PNP)
(NPN)
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
(VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz)
2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
Symbol Min Max Unit
V(BR)CEO
40
Vdc
−40 −
V(BR)CBO
60
Vdc
−40 −
V(BR)EBO
6.0
Vdc
−5.0 −
IBL nAdc
− 50
− −50
ICEX
nAdc
− 50
− −50
hFE
VCE(sat)
VBE(sat)
40 −
70 −
100 300
60 −
30 −
60 −
80 −
100 300
60 −
30 −
− 0.2
− 0.3
− −0.25
− −0.4
0.65
−0.65
0.85
0.95
−0.85
−0.95
Vdc
Vdc
fT
Cobo
Cibo
MHz
300 −
250 −
pF
− 4.0
− 4.5
pF
− 8.0
− 10.0
http://onsemi.com
2


Part Number MBT3946DW1T1
Description Dual General Purpose Transistor
Maker ON Semiconductor
Total Page 12 Pages
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