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  ON Semiconductor Electronic Components Datasheet  

MC3346 Datasheet

General Purpose Transistor

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MC3346
General Purpose Transistor
Array One Differentially
Connected Pair and Three
Isolated Transistor Arrays
The MC3346 is designed for general purpose, low power
applications for consumer and industrial designs.
Guaranteed BaseEmitter Voltage Matching
Operating Current Range Specified: 10 μA to 10 mA
Five General Purpose Transistors in One Package
http://onsemi.com
GENERAL PURPOSE
TRANSISTOR ARRAY
SEMICONDUCTOR
TECHNICAL DATA
MAXIMUM RATINGS
Rating
CollectorEmitter Voltage
CollectorBase Voltage
EmitterBase Voltage
CollectorSubstrate Voltage
Collector Current Continuous
Total Power Dissipation @ TA =
25°C
Derate above 25°C
Operating Temperature Range
Storage Temperature Range
Symbol
VCEO
VCBO
VEB
VCIO
IC
PD
Value
15
20
5.0
20
50
1.2
10
Unit
Vdc
Vdc
Vdc
Vdc
mAdc
W
mW/°C
TA 40 to +85 °C
Tstg 65 to +150 °C
PIN CONNECTIONS
1 13
4
Q5
12 11 10
Q4
9
8
14
1
P SUFFIX
PLASTIC PACKAGE
CASE 646
14
1
D SUFFIX
PLASTIC PACKAGE
CASE 751A
(SO14)
ORDERING INFORMATION
Device
Operating
Temperature Range
Package
MC3346D
MC3356P
TA = 40° to +85°C
SO14
Plastic DIP
Q1 Q2 Q3
1 2 3 4 5 67
Pin 13 is connected to substrate and must remain at the lowest circuit potential.
© Semiconductor Components Industries, LLC, 2006
July, 2006 Rev. 2
1
Publication Order Number:
MC3346/D


  ON Semiconductor Electronic Components Datasheet  

MC3346 Datasheet

General Purpose Transistor

No Preview Available !

MC3346
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted.)
Characteristics
Symbol
STATIC CHARACTERISTICS
CollectorBase Breakdown Voltage
(IC = 10 μAdc)
CollectorEmitter Breakdown Voltage
(IC = 1.0 mAdc)
CollectorSubstrate Breakdown Voltage
(IC = 10 μA)
EmitterBase Breakdown Voltage
(IE = 10 μAdc)
CollectorBase Cutoff Current
(VCB = 10 Vdc, IE = 0)
DC Current Gain
(IC = 10 mAdc, VCE = 3.0 Vdc)
(IC = 1.0 mAdc, VCE = 3.0 Vdc)
(IC = 10 μAdc, VCE = 3.0 Vdc)
BaseEmitter Voltage
(VCE = 3.0 Vdc, IE = 1.0 mAdc)
(VCE = 3.0 Vdc, IE = 10 mAdc)
Input Offset Current for Matched Pair Q1 and Q2
(VCE = 3.0 Vdc, IC = 1.0 mAdc)
Magnitude of Input Offset Voltage
(VCE = 3.0 Vdc, IC = 1.0 mAdc)
Temperature Coefficient of BaseEmitter Voltage
(VCE = 3.0 Vdc, IC = 1.0 mAdc)
Temperature Coefficient
CollectorEmitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
DYNAMIC CHARACTERISTICS
Low Frequency Noise Figure
(VCE = 3.0 Vdc, IC = 100 μAdc, RS = 1.0 kΩ, f = 1.0 kHz)
Forward Current Transfer Ratio
(VCE = 3.0 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Short Circuit Input Impedance
(VCE = 3.0 Vdc, IC = 1.0 mAdc)
Open Circuit Output Impedance
(VCE = 3.0 Vdc, IC = 1.0 mAdc)
Reverse Voltage Transfer Ratio
(VCE = 3.0 Vdc, IC = 1.0 mAdc)
Forward Transfer Admittance
(VCE = 3.0 Vdc, IC = 1.0 mAdc, f = 1.0 MHz)
Input Admittance
(VCE = 3.0 Vdc, IC = 1.0 mAdc, f = 1.0 MHz)
Output Admittance
(VCE = 3.0 Vdc, IC = 1.0 mAdc, f = 1.0 MHz)
CurrentGain Bandwidth Product
(VCE = 3.0 Vdc, IC = 3.0 mAdc)
EmitterBase Capacitance
(VEB = 3.0 Vdc, IE = 0)
CollectorBase Capacitance
(VCB = 3.0 Vdc, IC = 0)
CollectorSubstrate Capacitance
(VCS = 3.0 Vdc, IC = 0)
V(BR)CBO
V(BR)CEO
V(BR)CIO
V(BR)EBO
ICBO
hFE
VBE
|IIO1 IIO2|
ΔVBE
DT
⎪ΔVIO
DT
ICEO
NF
hFE
hie
hoe
hre
yfe
yie
yoe
fT
Ceb
Ccb
CCI
Min Typ Max Unit
20 60
Vdc
15
Vdc
20 60
Vdc
5.0 7.0
Vdc
− − 40 nAdc
140
40 130
60
Vdc
0.72
0.8
0.3 2.0 μAdc
0.5 5.0 mVdc
− −1.9 mV/°C
1.0 μV/°C
− − 0.5 μAdc
3.25
110
3.5
15.6
1.8
31j1.5
0.3 + j0.04
0.001 +
j0.03
300 550
0.6
0.58
2.8
dB
−−
kΩ
μmhos
x104
−−
−−
−−
MHz
pF
pF
pF
http://onsemi.com
2


Part Number MC3346
Description General Purpose Transistor
Maker ON Semiconductor
PDF Download

MC3346 Datasheet PDF






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