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  ON Semiconductor Electronic Components Datasheet  

MCH3377 Datasheet

P-Channel Power MOSFET

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MCH3377 pdf
Ordering number : ENA0957B
MCH3377
P-Channel Power MOSFET
–20V, –3A, 83m, Single MCPH3
http://onsemi.com
Features
Ultrahigh-spees switching.
Halogen free compliance
1.8V drive
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm2×0.8mm)
Ratings
--20
±10
--3
--12
1
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
unit : mm (typ)
7019A-003
MCH3377-TL-E
2.0 0.15 MCH3377-TL-H
MCH3377-TL-W
3
0 to 0.02
Product & Package Information
• Package
: MCPH3
• JEITA, JEDEC
: SC-70, SOT-323
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
QJ
12
0.65 0.3
TL
Electrical Connection
3
1 : Gate
2 : Source
3 : Drain
MCPH3
1
2
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
March, 2014
32514HK TC-00002897/60612TKIM/N1407TIIM PE No. A0957-1/5


  ON Semiconductor Electronic Components Datasheet  

MCH3377 Datasheet

P-Channel Power MOSFET

No Preview Available !

MCH3377 pdf
MCH3377
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--1mA, VGS=0V
VDS=--20V, VGS=0V
VGS=±8V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--1.5A
ID=--1.5A, VGS=--4.5V
ID=--1A, VGS=--2.5V
ID=--0.2A, VGS=--1.8V
VDS=--10V, f=1MHz
See specified Test Circuit.
VDS=--10V, VGS=--4.5V, ID=--3A
IS=--3A, VGS=0V
min
--20
Ratings
typ
--0.4
2.2
3.8
63
88
130
375
77
58
8.1
26
42
37
4.6
0.8
1.3
--0.83
max
--1
±10
--1.3
83
125
200
--1.2
Unit
V
mA
mA
V
S
mW
mW
mW
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
VIN
0V
--4V
VIN
PW=10μs
D.C.1%
G
VDD= --10V
ID= --1.5A
RL=6.67
D VOUT
MCH3377
P.G 50S
Ordering Information
Device
MCH3377-TL-E
MCH3377-TL-H
MCH3377-TL-W
Package
MCPH3
Shipping
3,000pcs./reel
memo
Pb-Free
Pb-Free and Halogen Free
Pb-Free and Halogen Free
No. A0957-2/5


Part Number MCH3377
Description P-Channel Power MOSFET
Maker ON Semiconductor
Total Page 5 Pages
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