Full PDF Text Transcription for MCH3382 (Reference)
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MCH3382 Power MOSFET –12V, 198mΩ, –2A, Single P-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimi...
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onductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 1.2V drive • Pb-Free, Halogen Free and RoHS compliance Typical Applications • Load Switch SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1, 2) Parameter Symbol Value Unit Drain to Source Voltage VDSS −12 V Gate to Source Voltage VGSS ±9 V Drain Current (DC) ID −2 A Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP −8 A Power Dissipation When mounted on ceramic substrate
MCH3382 Datasheet
