MCH3476 - Power MOSFET

ON Semiconductor

Datasheet Details

Low On-Resistance.
1.8V Drive.
ESD Diode-Protected Gate.
Pb-Free, Halogen Free and RoHS Compliance VDSS 20V RDS(on) Max 125mΩ@ 4.5V 190mΩ@ 2.5V 310mΩ@ 1.8V ID Max 2A Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage Drain Current (DC) VGSS ID Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP Power Dissipation When mounted on ceramic substrate (900mm2 × 0.8mm) PD Junction Te.

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Published: Oct 25, 2015 |