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MCH3484 - Power MOSFET

Key Features

  • On-Resistance RDS(on)1=33m (typ).
  • 0.9V Drive.
  • Pb-Free, Halogen Free and RoHS Compliance.
  • ESD Diode-Protected Gate Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) VDSS VGSS ID Drain Current (Pulse) PW10s, duty cycle1% IDP Power Dissipation When mounted on ceramic substrate (900mm20.8mm) PD Junction Temperature Tj Operating Temperature Topr Storage Temperature Tstg Va.

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Datasheet Details

Part number MCH3484
Manufacturer onsemi
File Size 216.05 KB
Description Power MOSFET
Datasheet download datasheet MCH3484 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MCH3484 Power MOSFET 20V, 40mΩ, 4.5A, Single N-Channel www.onsemi.com Features  On-Resistance RDS(on)1=33m (typ)  0.9V Drive  Pb-Free, Halogen Free and RoHS Compliance  ESD Diode-Protected Gate Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) VDSS VGSS ID Drain Current (Pulse) PW10s, duty cycle1% IDP Power Dissipation When mounted on ceramic substrate (900mm20.8mm) PD Junction Temperature Tj Operating Temperature Topr Storage Temperature Tstg Value 20 5 4.5 18 1.0 150 5 to +150 55 to +150 Unit V V A A W C C C Electrical Connection N-Channel 3 1 1 : Gate 2 : Source 2 3 : Drain Packing Type : TL Marking FR TL LOT No. LOT No.