Protection diode in
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Conditions
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature
VDSS VGSS ID IDP PD Tch
PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1500mm2×0.8mm)
Storage Temperature
Tstg
Ratings -12 ±10 -6.0.
Full PDF Text Transcription for MCH6353 (Reference)
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MCH6353. For precise diagrams, and layout, please refer to the original PDF.
Ordering number : ENA2206 MCH6353 P-Channel Power MOSFET -12V, -6.0A, 35mΩ, Single MCPH6 http://onsemi.com Features • On-resistance RDS(on)1=29mΩ(typ.) • Halogen free com...
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mi.com Features • On-resistance RDS(on)1=29mΩ(typ.) • Halogen free compliance • 1.5V drive • Protection diode in Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1500mm2×0.8mm) Storage Temperature Tstg Ratings -12 ±10 -6.0 -24 1.4 150 - 55 to +150 Unit V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
MCH6353 Datasheet
