Datasheet4U.com

MCH6664 - P-Channel Power MOSFET

ON Semiconductor

📥 Download Datasheet

MCH6664 Datasheet Preview — Preview of MCH6664 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	MCH6664
Manufacturer	ON Semiconductor ↗
File Size	342.82 KB
Description	P-Channel Power MOSFET
Datasheet	MCH6664-ONSemiconductor.pdf

MCH6664 Product details

Features

ON-resistance Pch : RDS(on)1=250mW (typ. ).
4V drive.
Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature VDSS VGSS ID IDP PD Tj PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit Storage Temperature Tstg Lead Temperature for Soldering Purposes, 3m.

📁 MCH6664 Similar Datasheet

MCH6660 - N-Channel and P-Channel Silicon MOSFETs (Sanyo Semicon Device)
MCH6663 - N-Channel and P-Channel Silicon MOSFETs (Sanyo Semicon Device)
MCH6601 - Ultrahigh-Speed Switching Applications (Sanyo)
MCH6602 - Ultrahigh-Speed Switching Applications (Sanyo)
MCH6603 - Ultrahigh-Speed Switching Applications (Sanyo)
MCH6604 - Ultrahigh-Speed Switching Applications (Sanyo)
MCH6605 - Ultrahigh-Speed Switching Applications (Sanyo)
MCH6606 - Ultrahigh-Speed Switching Applications (Sanyo)

Other Datasheets by ON Semiconductor

MCH6661 - N-Channel Power MOSFET
MCH6662 - Power MOSFET
MCH6613 - Power MOSFET
MCH6626 - N-Channel and P-Channel Silicon MOSFETs
MCH6001 - RF Transistor
MCH6101 - Bipolar Transistor

Published: Jan 11, 2016 |