Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature
VDSS VGSS ID IDP PD Tj
PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit
Storage Temperature
Tstg
Lead Temperature for Soldering Purposes, 3m.
Full PDF Text Transcription for MCH6664 (Reference)
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MCH6664. For precise diagrams, and layout, please refer to the original PDF.
Ordering number : ENA2281A MCH6664 P-Channel Power MOSFET –30V, –1.5A, 325mΩ, Dual MCPH6 http://onsemi.com Features • ON-resistance Pch : RDS(on)1=250mW (typ.) • 4V drive...
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mi.com Features • ON-resistance Pch : RDS(on)1=250mW (typ.) • 4V drive • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature VDSS VGSS ID IDP PD Tj PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit Storage Temperature Tstg Lead Temperature for Soldering Purposes, 3mm from Case for 10 Seconds TL This product is designed to “ESD immunity < 200V*”, so please take care when handling.
MCH6664 Datasheet
