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  ON Semiconductor Electronic Components Datasheet  

MCR08M Datasheet

Sensitive Gate Silicon Controlled Rectifiers

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MCR08B, MCR08M
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for line powered consumer applications
such as relay and lamp drivers, small motor controls, gate drivers for
larger thyristors, and sensing and detection circuits. Supplied in
surface mount package for use in automated manufacturing.
Features
Sensitive Gate Trigger Current
Blocking Voltage to 600 V
Glass Passivated Surface for Reliability and Uniformity
Surface Mount Package
These Devices are PbFree and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive OffState Voltage (Note 1)
(Sine Wave, RGK = 1 kW
TJ = 25 to 110°C)
MCR08B
MCR08M
VDRM,
VRRM
200
600
V
On-State Current RMS
(All Conduction Angles; TC = 80°C)
IT(RMS)
0.8
A
Peak Non-repetitive Surge Current
ITSM 8.0 A
(1/2 Cycle Sine Wave, 60 Hz, TC = 25°C)
Circuit Fusing Considerations (t = 8.3 ms)
I2t
0.4 A2s
Forward Peak Gate Power
(TC = 80°C, t = 1.0 ms)
Average Gate Power
(TC = 80°C, t = 8.3 ms)
Operating Junction Temperature Range
Storage Temperature Range
THERMAL CHARACTERISTICS
Rating
PGM
0.1 W
PG(AV)
0.01
W
TJ 40 to +110 °C
Tstg 40 to +150 °C
Symbol
Value
Unit
Thermal Resistance, JunctiontoAmbient
PCB Mounted per Figure 1
RqJA
156 °C/W
Thermal Resistance, JunctiontoTab
Measured on Anode Tab Adjacent to Epoxy
RqJT
25 °C/W
Maximum Device Temperature for Solder-
ing Purposes (for 10 Seconds Maximum)
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant source such that the voltage
ratings of the devices are exceeded.
© Semiconductor Components Industries, LLC, 2013
October, 2013 Rev. 7
1
http://onsemi.com
SCRs
0.8 AMPERES RMS
200 thru 600 VOLTS
G
AK
MARKING
DIAGRAM
SOT223
AYW
1
CASE 318E
CR08x G
STYLE 10
G
1
CR08x = Device Code
x = B or M
A = Assembly Location
Y = Year
W = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
1 Cathode
2 Anode
3 Gate
4 Anode
ORDERING INFORMATION
Device
Package
Shipping
MCR08BT1G SOT223 1000/Tape &Reel
(PbFree)
MCR08MT1G SOT223 1000/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MCR08BT1/D


  ON Semiconductor Electronic Components Datasheet  

MCR08M Datasheet

Sensitive Gate Silicon Controlled Rectifiers

No Preview Available !

MCR08B, MCR08M
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (Note 3)
(VAK = Rated VDRM or VRRM, RGK = 1 kW
ON CHARACTERISTICS
TJ = 25°C
TJ = 110°C
Peak Forward On-State Voltage (Note 2) (IT = 1.0 A Peak)
Gate Trigger Current (Continuous dc) (Note 4) (VAK = 12 Vdc, RL = 100 W)
Holding Current (Note 3) (VAK = 12 Vdc, Initiating Current = 20 mA)
Gate Trigger Voltage (Continuous dc) (Note 4) (VAK = 12 Vdc, RL = 100 W)
TurnOn Time (VAK = 12 Vdc, ITM = 5 Adc, IGT = 5 mA)
DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off State Voltage
(Vpk = Rated VDRM, TC = 110°C, RGK = 1 kW, Exponential Method)
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
3. RGK = 1000 W is included in measurement.
4. RGK is not included in measurement.
Symbol
Min Typ Max Unit
IDRM, IRRM
10 mA
200 mA
VTM
IGT
IH
VGT
tgt
dv/dt
− − 1.7 V
− − 200 mA
− − 5.0 mA
− − 0.8 V
1.25
ms
10
V/ms
Symbol
VDRM
IDRM
VRRM
IRRM
VTM
IH
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
Voltage Current Characteristic of SCR
+ Current
Anode +
IRRM at VRRM
on state
VTM
IH
0.984
25.0
0.079
2.0
0.15
3.8
0.079
2.0
0.091 0.091
2.3 2.3
0.244
6.2
ǒ Ǔ0.059 0.059 0.059
inches
mm
1.5 1.5 1.5
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
0.096
2.44
0.096
2.44
0.096
2.44
0.059
1.5
0.059
1.5
BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR.
BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL.
MATERIAL: G10 FIBERGLASS BASE EPOXY
0.472
12.0
Figure 1. PCB for Thermal Impedance and Power Testing of SOT-223
http://onsemi.com
2


Part Number MCR08M
Description Sensitive Gate Silicon Controlled Rectifiers
Maker ON Semiconductor
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MCR08M Datasheet PDF





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