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  ON Semiconductor Electronic Components Datasheet  

MCR12DCM Datasheet

Silicon Controlled Rectifiers Reverse Blocking Thyristors

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MCR12DCM, MCR12DCN
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control.
Features
Small Size
Passivated Die for Reliability and Uniformity
Low Level Triggering and Holding Characteristics
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
Pb−Free Packages are Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz,
Gate Open)
MCR12DCM
MCR12DCN
VDRM,
VRRM
600
800
V
On−State RMS Current
(180° Conduction Angles; TC = 90°C)
IT(RMS)
12
A
Average On−State Current
(180° Conduction Angles; TC = 90°C)
IT(AV)
7.8
A
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C)
Circuit Fusing Consideration (t = 8.3 msec)
ITSM
I2t
100 A
41 A2sec
Forward Peak Gate Power
(Pulse Width 1.0 msec, TC = 90°C)
PGM 5.0 W
Forward Average Gate Power
(t = 8.3 msec, TC = 90°C)
PG(AV)
0.5
W
Forward Peak Gate Current
(Pulse Width 1.0 msec, TC = 90°C)
IGM 2.0 A
Operating Junction Temperature Range
TJ −40 to 125 °C
Storage Temperature Range
Tstg − 40 to 150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM for all types can be applied on a continuous basis. Ratings apply for zero
or negative gate voltage; positive gate voltage shall not be applied concurrent
with negative potential on the anode. Blocking voltages shall not be tested
with a constant current source such that the voltage ratings of the device are
exceeded.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 5
1
http://onsemi.com
SCRs
12 AMPERES RMS
600 − 800 VOLTS
G
AK
4
12
3
DPAK
CASE 369C
STYLE 4
MARKING DIAGRAM
YWW
R1
2DCxG
Y
WW
R12DCx
G
= Year
= Work Week
= Device Code
x= M or N
= Pb−Free Package
PIN ASSIGNMENT
1 Cathode
2 Anode
3 Gate
4 Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MCR12DCM/D


  ON Semiconductor Electronic Components Datasheet  

MCR12DCM Datasheet

Silicon Controlled Rectifiers Reverse Blocking Thyristors

No Preview Available !

MCR12DCM, MCR12DCN
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance − Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering Purposes (Note 3)
Symbol
RqJC
RqJA
RqJA
TL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
ON CHARACTERISTICS
TJ = 25°C
TJ = 125°C
IDRM,
IRRM
Peak Forward On−State Voltage (Note 4) (ITM = 20 A)
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 W)
TJ = 25°C
TJ = *40°C
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 W)
TJ = 25°C
TJ = *40°C
Gate Non−Trigger Voltage
(VD = 12 V, RL = 100 W)
TJ = 125°C
Holding Current
(VD = 12 V, Initiating Current = 200 mA, Gate Open) TJ = 25°C
TJ = −40°C
Latching Current
(VD = 12 V, IG = 20 mA, TJ = 25°C)
(VD = 12 V, IG = 40 mA, TJ = −40°C)
VTM
IGT
VGT
VGD
IH
IL
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
dv/dt
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
3. 1/8from case for 10 seconds.
4. Pulse Test: Pulse Width 2.0 msec, Duty Cycle 2%.
Max Unit
2.2 °C/W
88
80
260 °C
Min Typ Max Unit
mA
− − 0.01
− − 5.0
− 1.3 1.9
2.0 7.0 20
− − 40
0.5 0.65 1.0
− − 2.0
0.2 −
V
mA
V
V
mA
4.0 22 40
− − 80
mA
4.0 22 40
− − 80
50 200
V/ms
ORDERING INFORMATION
Device
Package
Shipping
MCR12DCMT4
DPAK
2500 / Tape and Reel
MCR12DCMT4G
DPAK
(Pb−Free)
2500 / Tape and Reel
MCR12DCNT4
DPAK
2500 / Tape and Reel
MCR12DCNT4G
DPAK
(Pb−Free)
2500 / Tape and Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2


Part Number MCR12DCM
Description Silicon Controlled Rectifiers Reverse Blocking Thyristors
Maker ON Semiconductor
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MCR12DCM Datasheet PDF






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