900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




  ON Semiconductor Electronic Components Datasheet  

MCR12DSN Datasheet

Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

No Preview Available !

www.DataSheet4U.com
MCR12DSM, MCR12DSN
Preferred Device
Sensitive Gate Silicon
Controlled Rectifiers
Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control.
Features
Small Size
Passivated Die for Reliability and Uniformity
Low Level Triggering and Holding Characteristics
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
Pb−Free Packages are Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 110°C, Sine Wave, 50 to 60 Hz,
Gate Open)
MCR12DSM
MCR12DSN
VDRM,
VRRM
600
800
Unit
V
On−State RMS Current
(180° Conduction Angles; TC = 75°C)
IT(RMS)
12
A
Average On−State Current
(180° Conduction Angles; TC = 75°C)
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C)
Circuit Fusing Consideration (t = 8.3 msec)
IT(AV)
ITSM
I2t
7.6 A
100 A
41 A2sec
Forward Peak Gate Power
(Pulse Width 1.0 msec, TC = 75°C)
Forward Average Gate Power
(t = 8.3 msec, TC = 75°C)
PGM
PG(AV)
5.0
0.5
W
W
Forward Peak Gate Current
(Pulse Width 1.0 msec, TC = 75°C)
IGM 2.0 A
Operating Junction Temperature Range
TJ −40 to 110 °C
Storage Temperature Range
Tstg −40 to 150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
http://onsemi.com
SCRs
12 AMPERES RMS
600 − 800 VOLTS
G
AK
12
3
4
DPAK
CASE 369C
STYLE 4
MARKING
DIAGRAMS
YWW
R1
2DSxG
1
2
3
4
DPAK−3
CASE 369D
STYLE 4
YWW
R1
2DSxG
Y
WW
R12DSx
G
= Year
= Work Week
= Device Code
x= M or N
= Pb−Free Package
PIN ASSIGNMENT
1 Cathode
2 Anode
3 Gate
4 Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 4
1
Publication Order Number:
MCR12DSM/D


  ON Semiconductor Electronic Components Datasheet  

MCR12DSN Datasheet

Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

No Preview Available !

MCR12DSM, MCR12DSN
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,− Junction−to−Case
Thermal Resistance − Junction−to−Ambient
Thermal Resistance − Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering Purposes (Note 3)
Symbol
RqJC
RqJA
RqJA
TL
Max Unit
2.2 °C/W
88
80
260 °C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristics
Symbol
Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (Note 4)
(VAK = Rated VDRM or VRRM; RGK = 1.0 KW)
TJ = 25°C
TJ = 110°C
IDRM,
IRRM
mA
− − 10
− − 500
ON CHARACTERISTICS
Peak Reverse Gate Blocking Voltage, (IGR = 10 mA)
Peak Reverse Gate Blocking Current, (VGR = 10 V)
Peak Forward On−State Voltage (Note 5), (ITM = 20 A)
Gate Trigger Current (Continuous dc) (Note 6)
(VD = 12 V, RL = 100 W)
TJ = 25°C
TJ = −40°C
Gate Trigger Voltage (Continuous dc) (Note 6)
(VD = 12 V, RL = 100 W)
TJ = 25°C
TJ = −40°C
TJ = 110°C
Holding Current
(VD = 12 V, Initiating Current = 200 mA, Gate Open)
TJ = 25°C
TJ = −40°C
Latching Current
(VD = 12 V, IG = 2.0 mA)
TJ = 25°C
TJ = −40°C
Turn−On Time
(Source Voltage = 12 V, RS = 6.0 KW, IT = 16 A(pk), RGK = 1.0 KW)
(VD = Rated VDRM, Rise Time = 20 ns, Pulse Width = 10 ms)
DYNAMIC CHARACTERISTICS
VGRM
IGRM
VTM
IGT
VGT
IH
IL
tgt
10 12.5 18
− − 1.2
− 1.3 1.9
5.0 12 200
− − 300
0.45 0.65
−−
0.2 −
1.0
1.5
0.5 1.0 6.0
− − 10
0.5 1.0 6.0
− − 10
− 2.0 5.0
V
mA
V
mA
V
mA
mA
ms
Critical Rate of Rise of Off−State Voltage
(VD = 0.67 x Rated VDRM, Exponential Waveform, RGK = 1.0 KW, TJ = 110°C)
dv/dt
V/ms
2.0 10
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
3. 1/8from case for 10 seconds.
4. Ratings apply for negative gate voltage or RGK = 1.0 kW. Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
5. Pulse Test: Pulse Width 2.0 msec, Duty Cycle 2%.
6. RGK current not included in measurement.
http://onsemi.com
2


Part Number MCR12DSN
Description Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
Maker ON Semiconductor
PDF Download

MCR12DSN Datasheet PDF





Similar Datasheet

1 MCR12DSM Silicon Controlled Rectifiers
Motorola
2 MCR12DSM Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
ON Semiconductor
3 MCR12DSN Silicon Controlled Rectifiers
Motorola
4 MCR12DSN Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
ON Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy