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  ON Semiconductor Electronic Components Datasheet  

MCR12L Datasheet

Silicon Controlled Rectifiers Reverse Blocking Thyristors

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MCR12LD, MCR12LM,
MCR12LN
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half−wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half−wave, silicon gate−controlled devices are needed.
Features
Blocking Voltage to 800 Volts
On−State Current Rating of 12 Amperes RMS at 80°C
High Surge Current Capability − 100 Amperes
Rugged, Economical TO−220AB Package
Glass Passivated Junctions for Reliability and Uniformity
Minimum and Maximum Values of IGT, VGT and IH Specified for
Ease of Design
High Immunity to dv/dt − 100 V/msec Minimum at 125°C
Pb−Free Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MCR12LD
MCR12LM
MCR12LN
VDRM,
VRRM
400
600
800
Unit
V
On-State RMS Current
(180° Conduction Angles; TC = 80°C)
IT(RMS)
12
A
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C)
Circuit Fusing Consideration (t = 8.3 ms)
ITSM
I2t
100 A
41 A2sec
Forward Peak Gate Power
(Pulse Width 1.0 ms, TC = 80°C)
Forward Average Gate Power
(t = 8.3 ms, TC = 80°C)
PGM
PG(AV)
5.0
0.5
W
W
Forward Peak Gate Current
(Pulse Width 1.0 ms, TC = 80°C)
IGM 2.0 A
Operating Junction Temperature Range
TJ −40 to 125 °C
Storage Temperature Range
Tstg −40 to 150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings
of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 2
1
http://onsemi.com
SCRs
12 AMPERES RMS
400 thru 800 VOLTS
G
AK
MARKING
DIAGRAM
1
23
TO−220AB
CASE 221A−09
STYLE 3
AY WW
MCR12LxG
AKA
A
Y
WW
x
G
AKA
= Assembly Location
= Year
= Work Week
= D, M, or N
= Pb−Free Package
= Diode Polarity
PIN ASSIGNMENT
1 Cathode
2 Anode
3 Gate
4 Anode
ORDERING INFORMATION
Device
Package
Shipping
MCR12LD
MCR12LDG
MCR12LM
MCR12LMG
MCR12LN
TO−220AB
TO−220AB
(Pb−Free)
TO−220AB
TO−220AB
(Pb−Free)
TO−220AB
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
MCR12LNG
TO−220AB
(Pb−Free)
50 Units / Rail
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MCR12L/D


  ON Semiconductor Electronic Components Datasheet  

MCR12L Datasheet

Silicon Controlled Rectifiers Reverse Blocking Thyristors

No Preview Available !

MCR12LD, MCR12LM, MCR12LN
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VD = Rated VDRM and VRRM; Gate Open)
ON CHARACTERISTICS
TJ = 25°C
TJ = 125°C
Peak Forward On−State Voltage (Note 2)
(ITM = 24 A)
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 W)
Holding Current
(VD = 12 V, Gate Open, Initiating Current = 200 mA)
Latch Current (VD = 12 V, Ig = 20 mA)
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 W)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
Critical Rate of Rise of On−State Current
IPK = 50 A; Pw = 40 msec; diG/dt = 1 A/msec, Igt = 50 mA
2. Indicates Pulse Test: Pulse Width v 1.0 ms, Duty Cycle v 2%.
Symbol
RqJC
RqJA
TL
Value
2.2
62.5
260
Unit
°C/W
°C
Symbol Min Typ Max Unit
IDRM,
IRRM
− − 0.01 mA
− − 2.0
VTM − − 2.2 V
IGT
2.0 4.0 8.0
mA
IH 4.0 10 20 mA
IL 6.0 12 30 mA
VGT
0.5 0.65 0.8
V
dv/dt
di/dt
100 250 − V/ms
− − 50 A/ms
http://onsemi.com
2


Part Number MCR12L
Description Silicon Controlled Rectifiers Reverse Blocking Thyristors
Maker ON Semiconductor
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MCR12L Datasheet PDF






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