900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




  ON Semiconductor Electronic Components Datasheet  

MCR218-10FP Datasheet

Silicon Controlled Rectifier

No Preview Available !

MCR218-6FP, MCR218-10FP
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supply crowbar circuits.
Glass Passivated Junctions with Center Gate Fire for Greater
Parameter Uniformity and Stability
Small, Rugged, Thermowatt Constructed for Low Thermal
Resistance, High Heat Dissipation and Durability
Blocking Voltage to 800 Volts
w
w
w
.
D
a
t
a
S
h
ee
t4U.com
80 A Surge
Current
Capability
Insulated Package Simplifies Mounting
Indicates UL Registered — File #E69369
Device Marking: Logo, Device Type, e.g., MCR218–6, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Peak Repetitive Off–State Voltage(1)
(TJ = –40 to +125°C, Sine Wave 50 to
60 Hz, Gate Open)
MCR218–6FP
MCR218–10FP
VDRM,
VRRM
400
800
Unit
Volts
On-State RMS Current (TC = +70°C)(2) IT(RMS) 8.0 Amps
(180° Conduction Angles)
Peak Nonrepetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,
TJ = 125°C)
Circuit Fusing (t = 8.3 ms)
ITSM
I2t
100 Amps
26 A2s
Forward Peak Gate Power
v(TC = +70°C, Pulse Width 1.0 µs)
PGM
5.0 Watts
Forward Average Gate Power
(TC = +70°C, t = 8.3 ms)
PG(AV) 0.5 Watt
Forward Peak Gate Current
v(TC = +70°C, Pulse Width 1.0 µs)
pRMS Isolation Voltage (TA = 25°C,
Relative Humidity 20%) ( )
IGM
V(ISO)
2.0 Amps
1500
Volts
Operating Junction Temperature
TJ
–40 to
°C
+125
Storage Temperature Range
Tstg
–40 to
°C
+150
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) The case temperature reference point for all TC measurements is a point on
the center lead of the package as close as possible to the plastic body.
http://onsemi.com
ISOLATED SCRs (
8 AMPERES RMS
400 thru 800 VOLTS
)
G
AK
1
2
3
ISOLATED TO–220 Full Pack
CASE 221C
STYLE 2
PIN ASSIGNMENT
1 Cathode
2 Anode
3 Gate
ORDERING INFORMATION
Device
Package
Shipping
MCR218–6FP ISOLATED TO220FP 500/Box
MCR218–10FP ISOLATED TO220FP 500/Box
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 1999
February, 2000 – Rev. 2
1
Publication Order Number:
MCR218FP/D


  ON Semiconductor Electronic Components Datasheet  

MCR218-10FP Datasheet

Silicon Controlled Rectifier

No Preview Available !

MCR218–6FP, MCR218–10FP
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds
Symbol
RθJC
RθCS
RθJA
TL
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Peak Repetitive Forward or Reverse Blocking Current
(VD = Rated VDRM, Gate Open)
www.DataSheet4U.com
ON CHARACTERISTICS
TJ = 25°C
TJ = 125°C
Peak Forward On–State Voltage(1)
(ITM = 16 A Peak)
Gate Trigger Current (Continuous dc)
(VAK = 12 Vdc, RL = 100 Ohms)
Gate Trigger Voltage (Continuous dc)
(VAK = 12 Vdc, RL = 100 Ohms)
Gate Non-Trigger Voltage
(VAK = 12 Vdc, RL = 100 Ohms, TJ = 125°C)
Holding Current
(VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open)
Turn-On Time
(ITM = 8 A, IGT = 40 mAdc)
Turn-Off Time (VD = Rated VDRM,
ITM = 8 A, IR = 8 A)
TJ = 25°C
TJ = 125°C
DYNAMIC CHARACTERISTICS
IDRM,
IRRM
VTM
IGT
VGT
VGD
IH
tgt
tq
0.2
Critical Rate-of-Rise of Off-State Voltage
(Gate Open, VD = Rated VDRM, Exponential Waveform)
p(1) Pulse Test: Pulse Width = 1 ms, Duty Cycle 2%.
dv/dt
Max
2
2.2 (typ)
60
260
Typ
1
10
16
1.5
15
35
100
Unit
°C/W
°C/W
°C/W
°C
Max Unit
10 µA
2 mA
1.8 Volts
25 mA
1.5 Volts
— Volts
30 mA
µs
µs
— V/µs
http://onsemi.com
2


Part Number MCR218-10FP
Description Silicon Controlled Rectifier
Maker ON Semiconductor
PDF Download

MCR218-10FP Datasheet PDF






Similar Datasheet

1 MCR218-10FP Silicon Controlled Rectifier
ON Semiconductor
2 MCR218-10FP Silicon Controlled Rectifiers
Motorola





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy