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MCR218-2G - Silicon Controlled Rectifiers

Features

  • Glass-Passivated Junctions.
  • Blocking Voltage to 400 Volts.
  • TO-220 Construction.
  • Low Thermal Resistance, High Heat Dissipation and Durability.

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Datasheet Details

Part number MCR218-2G
Manufacturer ON Semiconductor
File Size 59.04 KB
Description Silicon Controlled Rectifiers
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MCR218-2G, MCR218-4G, MCR218-6G Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. Features • Glass-Passivated Junctions • Blocking Voltage to 400 Volts • TO-220 Construction − Low Thermal Resistance, High Heat Dissipation and Durability MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (TJ = *40 to 125°C, Gate Open) MCR218−2G MCR218−4G MCR218−6G VDRM, VRRM 50 200 400 V On-State RMS Current (180° Conduction Angles; TC = 70°C) IT(RMS) 8.
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