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MCR218-4G - Silicon Controlled Rectifiers

Download the MCR218-4G datasheet PDF. This datasheet also covers the MCR218-2G variant, as both devices belong to the same silicon controlled rectifiers family and are provided as variant models within a single manufacturer datasheet.

Features

  • Glass-Passivated Junctions.
  • Blocking Voltage to 400 Volts.
  • TO-220 Construction.
  • Low Thermal Resistance, High Heat Dissipation and Durability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MCR218-2G-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MCR218-4G
Manufacturer onsemi
File Size 59.04 KB
Description Silicon Controlled Rectifiers
Datasheet download datasheet MCR218-4G Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MCR218-2G, MCR218-4G, MCR218-6G Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. Features • Glass-Passivated Junctions • Blocking Voltage to 400 Volts • TO-220 Construction − Low Thermal Resistance, High Heat Dissipation and Durability MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (TJ = *40 to 125°C, Gate Open) MCR218−2G MCR218−4G MCR218−6G VDRM, VRRM 50 200 400 V On-State RMS Current (180° Conduction Angles; TC = 70°C) IT(RMS) 8.
Datasheet originally released: |