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  ON Semiconductor Electronic Components Datasheet  

MCR218-6G Datasheet

Silicon Controlled Rectifiers

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MCR218-2G, MCR218-4G,
MCR218-6G
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies; or wherever
half-wave silicon gate-controlled, solid-state devices are needed.
Features
Glass-Passivated Junctions
Blocking Voltage to 400 Volts
TO-220 Construction − Low Thermal Resistance, High Heat
Dissipation and Durability
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
(TJ = *40 to 125°C, Gate Open)
MCR218−2G
MCR218−4G
MCR218−6G
VDRM,
VRRM
50
200
400
V
On-State RMS Current
(180° Conduction Angles; TC = 70°C)
IT(RMS)
8.0
A
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C)
Circuit Fusing Considerations (t = 8.3 ms)
ITSM
I2t
100 A
26 A2s
Forward Peak Gate Power
(Pulse Width 1.0 ms, TC = 70°C)
Forward Average Gate Power
(t = 8.3 ms, TC = 70°C)
PGM
PG(AV)
5.0
0.5
W
W
Forward Peak Gate Current
(Pulse Width 1.0 ms, TC = 70°C)
IGM 2.0 A
Operating Junction Temperature Range
TJ −40 to +125 °C
Storage Temperature Range
Tstg − 40 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
www.onsemi.com
SCRs
8 AMPERES RMS
50 thru 400 VOLTS
G
AC
MARKING
DIAGRAM
4
1
2
3
TO−220AB
CASE 221A−09
STYLE 3
AY WW
MCR218x−G
AKA
A
Y
WW
MCR218x
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
x = 2, 4 or 6
= Pb−Free Package
= Diode Polarity
ORDERING INFORMATION
Device
Package
Shipping
MCR218−2G
TO220AB
(Pb−Free)
500 Units/Bulk
MCR218−4G
TO220AB
(Pb−Free)
500 Units/Bulk
MCR218−6G
TO220AB
(Pb−Free)
500 Units/Bulk
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 5
1
Publication Order Number:
MCR218/D


  ON Semiconductor Electronic Components Datasheet  

MCR218-6G Datasheet

Silicon Controlled Rectifiers

No Preview Available !

MCR218−2G, MCR218−4G, MCR218−6G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds
Symbol
RqJC
TL
Max Unit
2.0 °C/W
260 °C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.)
Characteristic
Symbol
Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
TJ = 25°C
TJ = 125°C
IDRM, IRRM
− 10 mA
− 2.0 mA
ON CHARACTERISTICS
Peak Forward On-State Voltage (Note 2)
(ITM = 16 A Peak)
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 Ohms)
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 Ohms)
Gate Non−Trigger Voltage
(Rated 12 V, RL = 100 Ohms, TJ = 125°C)
Holding Current
(VD = 12 Vdc, Initiating Current = 200 mA, Gate Open)
DYNAMIC CHARACTERISTICS
VTM
− 1.5 1.8
V
IGT − 10 25 mA
VGT − − 1.5 V
VGD
0.2 −
V
IH − 16 30 mA
Critical Rate-of-Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
dv/dt
− 100 −
V/ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 1.0 ms, Duty Cycle 2%.
Voltage Current Characteristic of SCR
+ Current
Anode +
Symbol
VDRM
IDRM
VRRM
IRRM
VTM
IH
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
IRRM at VRRM
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
VTM
IH
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
www.onsemi.com
2


Part Number MCR218-6G
Description Silicon Controlled Rectifiers
Maker ON Semiconductor
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MCR218-6G Datasheet PDF






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