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  ON Semiconductor Electronic Components Datasheet  

MCR22-6 Datasheet

(MCR22-6 / -8) SENSITIVE GATE SILICON CONTROLLED RECTIFIERS

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MCR22-6, MCR22-8
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed and tested for repetitive peak operation required for CD
ignition, fuel ignitors, flash circuits, motor controls and lowpower
switching applications.
Features
150 A for 2 ms Safe Area
High dv/dt
Very Low Forward “On” Voltage at High Current
LowCost TO226 (TO92)
PbFree Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Peak Repetitive OffState Voltage (Note 1)
(RGK = IK, TJ = *40 to +110°C, Sine Wave,
50 to 60 Hz, RGK = 1kW)
MCR226
MCR228
VDRM,
VRRM
400
600
OnState Current RMS
(180° Conduction Angles, TC = 80°C)
IT(RMS)
1.5
Peak Nonrepetitive Surge Current,
@TA = 25°C, (1/2 Cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations (t = 8.3 ms)
ITSM
I2t
15
0.9
Forward Peak Gate Power
(Pulse Width 1.0 msec, TA = 25°C)
PGM
0.5
Forward Average Gate Power
(t = 8.3 msec, TA = 25°C)
PG(AV)
0.1
Forward Peak Gate Current
(Pulse Width 1.0 ms, TA = 25°C)
IFGM
0.2
Reverse Peak Gate Voltage
(Pulse Width 1.0 ms, TA = 25°C)
VRGM
5.0
Operating Junction Temperature Range
@ Rated VRRM and VDRM
TJ 40 to +110
Storage Temperature Range
THERMAL CHARACTERISTICS
Tstg 40 to +150
Unit
V
A
A
A2s
W
W
A
V
°C
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoCase
Thermal Resistance, JunctiontoAmbient
Lead Solder Temperature
(Lead Length q 1/16from case, 10 S Max)
RqJC
RqJA
TL
50
160
+260
°C/W
°C/W
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. aVpDpRlMy faonrdzeVrRoRoMr nfoergaaltlitvyepgeastceavnolbteagaep;phlioewdeovnear,cpoonstiitnivueoguastbeavsoilsta. Rgeatsinhgasll
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
November, 2008 Rev. 6
1
http://onsemi.com
SCRs
1.5 AMPERES RMS
400 thru 600 VOLTS
G
AK
123
12 3
STRAIGHT LEAD
BULK PACK TO92 (TO226)
CASE 029
STYLE 10
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAMS
MCR
22x
AYWW G
G
MCR22x =
A=
Y=
WW =
G=
Device Code
x = 6 or 8
Assembly Location
Year
Work Week
PbFree Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
1 Cathode
2 Gate
3 Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MCR226/D


  ON Semiconductor Electronic Components Datasheet  

MCR22-6 Datasheet

(MCR22-6 / -8) SENSITIVE GATE SILICON CONTROLLED RECTIFIERS

No Preview Available !

MCR226, MCR228
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM; RGK = 1 kW)
ON CHARACTERISTICS
TC = 25°C
TC = 110°C
Peak Forward OnState Voltage (Note 2)
(ITM = 1 A Peak)
Gate Trigger Current (Continuous dc) (Note 3)
(VAK = 6 Vdc, RL = 100 W)
TC = 25°C
TC = 40°C
Gate Trigger Voltage (Continuous dc) (Note 3)
(VAK = 7 Vdc, RL = 100 W)
Gate NonTrigger Voltage
(VAK = 12 Vdc, RL = 100 W)
Holding Current
(VAK = 12 Vdc, RGK = 1kW)
Initiating Current = 20 mA
DYNAMIC CHARACTERISTICS
TC = 25°C
TC = 40°C
TC = 110°C
TC = 25°C
TC = 40°C
Critical
(TC
Rate of Rise
= 110°C)
of
OffState
Voltage
(RGK
=
1kW)
2. Pulse Width = 1.0 ms, Duty Cycle v 1%.
3. RGK Current not included in measurement.
Symbol
Min Typ Max Unit
IDRM, IRRM
10 mA
200 mA
VTM
1.2 1.7
V
IGT
30 200
mA
− − 500
VGT − − 0.8 V
− − 1.2
VGD
0.1
V
IH mA
2.0 5.0
− − 10
dv/dt
25 V/ms
Voltage Current Characteristic of SCR
+ Current
Anode +
Symbol
VDRM
IDRM
VRRM
IRRM
VTM
IH
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak on State Voltage
Holding Current
IRRM at VRRM
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode
VTM
IH
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
http://onsemi.com
2


Part Number MCR22-6
Description (MCR22-6 / -8) SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
Maker ON Semiconductor
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MCR22-6 Datasheet PDF






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