MCR225-10FP Datasheet | onsemi

.. MCR225-8FP , MCR225-10FP Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. - Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability - Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability - Blocking Voltage to 800 Volts - 300 A Surge Current Capability - Insulated Package Simplifies Mounting - Indicates UL Registered - File #E69369 - Device Marking: Logo, Device Type, e.g., MCR225- 8FP, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off- State Voltage(1) (TJ = - 40 to +125°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR225- 8FP MCR225- 10FP On-State RMS Current (TC = +70°C) (180° Conduction Angles) Peak Non- repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TC = +70°C) Circuit Fusing (t = 8.3 ms) Forward Peak Gate Power (TC = +70°C, Pulse Width Symbol VDRM, VRRM 600 800 IT(RMS) ITSM 25 300 Amps Amps 1 2 I2t 375 20 0.5 2.0 1500 - 40 to +125 - 40 to +150 A2s Watts Watt Amps Volts °C °C 1 2 V(ISO) TJ Tstg 3 3 Value Unit Volts http://onsemi. ISOLATED SCRs ( 25 AMPERES RMS 600 thru 800 VOLTS ) G A K v 1.0 µs) PGM PG(AV) IGM ISOLATED TO- 220 Full Pack CASE 221C STYLE 2 Forward Average Gate Power (TC = +70°C, t = 8.3 ms) Forward Peak Gate Current (TC = +70°C, Pulse Width PIN ASSIGNMENT Cathode Anode Gate v 1.0 µs) RMS Isolation Voltage (TA = 25°C, Relative Humidity 20%) ( ) p Operating Junction Temperature Range Storage Temperature Range ORDERING INFORMATION Device MCR225- 8FP MCR225- 10FP Package ISOLATED TO220FP ISOLATED TO220FP Shipping 500/Box 500/Box (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking...