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  ON Semiconductor Electronic Components Datasheet  

MCR225-10FP Datasheet

ISOLATED SCR

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MCR225-8FP, MCR225-10FP
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supply crowbar circuits.
Glass Passivated Junctions with Center Gate Fire for Greater Parameter
Uniformity and Stability
Small, Rugged, Thermowatt Constructed for Low Thermal
Resistance, High Heat Dissipation and Durability
Blocking Voltage to 800 Volts
300 A Surge Current Capability
Insulated Package Simplifies Mounting
Indicates UL Registered — File #E69369
Device Marking: Logo, Device Type, e.g., MCR225–8FP, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Peak Repetitive Off–State Voltage(1)
(TJ = –40 to +125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MCR225–8FP
MCR225–10FP
VDRM,
VRRM
600
800
Unit
Volts
On-State RMS Current (TC = +70°C)
IT(RMS)
25
Amps
(180° Conduction Angles)
Peak Non–repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,
TC = +70°C)
Circuit Fusing (t = 8.3 ms)
ITSM
I2t
300 Amps
375 A2s
Forward Peak Gate Power
v(TC = +70°C, Pulse Width 1.0 µs)
PGM
20 Watts
Forward Average Gate Power
(TC = +70°C, t = 8.3 ms)
PG(AV) 0.5 Watt
Forward Peak Gate Current
v(TC = +70°C, Pulse Width 1.0 µs)
pRMS Isolation Voltage (TA = 25°C,
Relative Humidity 20%) ( )
IGM
V(ISO)
2.0 Amps
1500
Volts
Operating Junction Temperature Range
TJ
–40 to
+125
°C
Storage Temperature Range
Tstg
–40 to
°C
+150
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
http://onsemi.com
ISOLATED SCRs (
25 AMPERES RMS
600 thru 800 VOLTS
)
G
AK
1
2
3
ISOLATED TO–220 Full Pack
CASE 221C
STYLE 2
PIN ASSIGNMENT
1 Cathode
2 Anode
3 Gate
ORDERING INFORMATION
Device
Package
Shipping
MCR225–8FP ISOLATED TO220FP 500/Box
MCR225–10FP ISOLATED TO220FP 500/Box
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 1999
February, 2000 – Rev. 2
1
Publication Order Number:
MCR225FP/D


  ON Semiconductor Electronic Components Datasheet  

MCR225-10FP Datasheet

ISOLATED SCR

No Preview Available !

www.DataSheet4U.com
MCR225–8FP, MCR225–10FP
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds
Symbol
RθJC
RθCS
RθJA
TL
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Peak Repetitive Forward or Reverse Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C
TJ = 125°C
ON CHARACTERISTICS
Peak Forward On–State Voltage(1)
(ITM = 50 A)
Gate Trigger Current (Continuous dc)
(VAK = 12 Vdc, RL = 100 Ohms)
Gate Trigger Voltage (Continuous dc)
(VAK = 12 Vdc, RL = 100 Ohms)
Gate Non-Trigger Voltage
(VAK = 12 Vdc, RL = 100 Ohms, TJ = 125°C)
Holding Current
(VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open)
Turn-On Time
(ITM = 25 A, IGT = 40 mAdc)
Turn-Off Time (VDRM = Rated Voltage)
(ITM = 25 A, IR = 25 A)
(ITM = 25 A, IR = 25 A, TJ = 125°C)
DYNAMIC CHARACTERISTICS
IDRM,
IRRM
VTM
IGT
VGT
VGD
IH
tgt
tq
0.2
Critical Rate-of-Rise of Off-State Voltage
(Gate Open, VD = Rated VDRM, Exponential Waveform)
(1) Pulse Test: Pulse Width = 1.0 ms, Duty Cycle 2%.
dv/dt
Max
1.5
2.2 (typ)
60
260
Unit
°C/W
°C/W
°C/W
°C
Typ Max Unit
— 10 µA
— 2 mA
— 1.8 Volts
— 40 mA
0.8 1.5 Volts
— — Volts
20 40 mA
1.5 — µs
µs
15 —
35 —
100 — V/µs
http://onsemi.com
2


Part Number MCR225-10FP
Description ISOLATED SCR
Maker ON Semiconductor
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MCR225-10FP Datasheet PDF






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