• Part: MJD128T4G
  • Description: Complementary Darlington Power Transistor
  • Manufacturer: onsemi
  • Size: 101.80 KB
Download MJD128T4G Datasheet PDF
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Datasheet Summary

.. MJD128T4G (PNP) Preferred Device plementary Darlington Power Transistor DPAK For Surface Mount Applications Features http://onsemi. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Rating Symbol VCEO VCB VEB Continuous Peak IC IB PD PD TJ, Tstg Value 120 120 5 8 16 120 20 0.16 1.75 0.014 - 65 to + 150 Unit Vdc Vdc Vdc Adc mAdc W W/°C W W/°C °C Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current - Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C Total Power Dissipation- @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Designed for general purpose amplifier and low speed...