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MJE182 - Complementary Plastic Silicon Power Transistors

Download the MJE182 datasheet PDF. This datasheet also covers the MJE170 variant, as both devices belong to the same complementary plastic silicon power transistors family and are provided as variant models within a single manufacturer datasheet.

Features

  • http://onsemi. com.
  • Collector.
  • Emitter Sustaining Voltage.
  • VCEO(sus) = 40 Vdc.
  • MJE170, MJE180 = 60 Vdc.
  • MJE171, MJE181 = 80 Vdc.
  • MJE172, MJE182 DC Current Gain.
  • hFE = 30 (Min) @ IC = 0.5 Adc = 12 (Min) @ IC = 1.5 Adc Current.
  • Gain.
  • Bandwidth Product.
  • fT = 50 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakages.
  • ICBO = 100 nA (Max) @ Rated VCB Epoxy Meets UL 94 V.
  • 0 @ 0.125 in ESD Rati.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MJE170_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MJE182
Manufacturer onsemi
File Size 109.11 KB
Description Complementary Plastic Silicon Power Transistors
Datasheet download datasheet MJE182 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Preferred Device Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features http://onsemi.com • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171, MJE181 = 80 Vdc − MJE172, MJE182 DC Current Gain − hFE = 30 (Min) @ IC = 0.5 Adc = 12 (Min) @ IC = 1.5 Adc Current−Gain − Bandwidth Product − fT = 50 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakages − ICBO = 100 nA (Max) @ Rated VCB Epoxy Meets UL 94 V−0 @ 0.
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