MJE210G transistors equivalent, complementary silicon power plastic transistors.
* High DC Current Gain
* Low Collector−Emitter Saturation Voltage
* High Current−Gain − Bandwidth Product
* Annular Construction for Low Leakage
* The.
Features
* High DC Current Gain
* Low Collector−Emitter Saturation Voltage
* High Current−Gain − Bandwidth .
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