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MJE243G - Complementary Silicon Power Plastic Transistors

Key Features

  • High Collector.
  • Emitter Sustaining Voltage.
  • High DC Current Gain.
  • Low Collector.
  • Emitter Saturation Voltage.
  • High Current Gain Bandwidth Product.
  • Annular Construction for Low Leakages.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet Details

Part number MJE243G
Manufacturer onsemi
File Size 230.89 KB
Description Complementary Silicon Power Plastic Transistors
Datasheet download datasheet MJE243G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Complementary Silicon Power Plastic Transistors MJE243G (NPN), MJE253G (PNP) These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features  High Collector−Emitter Sustaining Voltage  High DC Current Gain  Low Collector−Emitter Saturation Voltage  High Current Gain Bandwidth Product  Annular Construction for Low Leakages  These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C VCEO VCB VEB IC ICM IB PD 100 Vdc 100 Vdc 7.0 Vdc 4.0 Adc 8.0 Adc 1.