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MJE340G - NPN Silicon Transistor

Features

  • Suitable for Transformerless, Line.
  • Operated Equipment.
  • High Power Dissipation Rating for High Reliability.
  • These Devices are Pb.
  • Free and are RoHS Compliant.
  • Complementary to MJE350.

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Datasheet Details

Part number MJE340G
Manufacturer onsemi
File Size 154.40 KB
Description NPN Silicon Transistor
Datasheet download datasheet MJE340G Datasheet
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MJE340G Plastic Medium-Power NPN Silicon Transistor This device is useful for high−voltage general purpose applications. Features • Suitable for Transformerless, Line−Operated Equipment • High Power Dissipation Rating for High Reliability • These Devices are Pb−Free and are RoHS Compliant* • Complementary to MJE350 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Total Power Dissipation @ TC = 25_C Derate above 25_C VCEO VEB IC PD 300 Vdc 3.0 Vdc 500 mAdc 20 W 0.16 mW/_C Operating and Storage Junction Temperature Range TJ, Tstg –65 to +150 _C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
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