MJE350G Overview
MJE350G Plastic Medium-Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability.
MJE350G Key Features
- VCEO(sus) 300 ICBO
- 100 100 mAdc
- mAdc Vdc Symbol Min Max Unit
- Rev. 17
- 55°C 1.0 TJ = 25°C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 10 V
- 2.8 5.0 7.0 10 qVB for VBE
- 55°C to + 25°C 20 30 50 70 100 IC, COLLECTOR
