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MMBD352WT1G Datasheet, ON Semiconductor

MMBD352WT1G diode equivalent, dual schottky barrier diode.

MMBD352WT1G Avg. rating / M : 1.0 rating-18

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MMBD352WT1G Datasheet

Features and benefits


* Very Low Capacitance − Less Than 1.0 pF @ 0 V
* Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA
* AEC Qualified and PPAP Capable
* NSV Prefix for Automot.

Application

but are suitable also for use in detector and ultra−fast switching circuits. Features
* Very Low Capacitance − Less .

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