MMBD717LT1G
MMBD717LT1G is Schottky Barrier Diodes manufactured by onsemi.
Features
- Extremely Fast Switching Speed
- Extremely Low Forward Voltage
- 0.28 V (Typ) @ IF = 1 m Adc
- These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
Forward Power Dissipation @ TA = 25°C Derate above 25°C
200 m W
1.6 m W/°C
Operating Junction Temperature Range
- 55 to +150 °C
Storage Temperature Range
Tstg
- 55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Rating
Symbol Min Typ Max Unit
Reverse Breakdown Voltage (IR = 10 m A)
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
Reverse Leakage (VR = 10 V) (For each individual diode while the second diode is unbiased)
V(BR)R 20
- -
- 2.0 2.5 PF
- 0.05 1.0 m Adc
Forward Voltage (IF = 1.0 m Adc)
- 0.28 0.37 Vdc
DATA SHEET...
