datasheet4u.com

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




  ON Semiconductor Electronic Components Datasheet  

MMBF2201N Datasheet

Power MOSFET

No Preview Available !

MMBF2201N pdf
MMBF2201N, NVF2201N
Power MOSFET
300 mAmps, 20 Volts
NChannel SC70/SOT323
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in small power management circuitry. Typical applications are
dcdc converters, power management in portable and
batterypowered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
Features
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SC70/SOT323 Surface Mount Package Saves
Board Space
NVF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable*
These Devices are PbFree and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage Continuous
Drain Current
Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (tp 10 ms)
Total Power Dissipation @ TA = 25°C
(Note 1)
Derate above 25°C
VDSS
VGS
ID
ID
IDM
PD
20 Vdc
± 20 Vdc
mAdc
300
240
750
150 mW
1.2 mW/°C
Operating and Storage Temperature Range
Thermal Resistance, JunctiontoAmbient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
TJ, Tstg
RqJA
TL
55 to 150
833
260
°C
°C/W
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted on G10/FR4 glass epoxy board using minimum recommended
footprint.
http://onsemi.com
300 mAMPS, 20 VOLTS
RDS(on) = 1 W
NChannel
3
1
2
1
2
MARKING DIAGRAM
AND PIN ASSIGNMENT
3
3
Drain
SC70/SOT323
CASE 419
STYLE 8
N1 M G
G
12
Gate Source
N1 = Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
MMBF2201NT1G SOT323
(PbFree)
3000 / Tape &
Reel
NVF2201NT1G*
SOT323
(PbFree)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
August, 2013 Rev. 7
1
Publication Order Number:
MMBF2201NT1/D


  ON Semiconductor Electronic Components Datasheet  

MMBF2201N Datasheet

Power MOSFET

No Preview Available !

MMBF2201N pdf
MMBF2201N, NVF2201N
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 10 mA)
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Static DraintoSource OnResistance
(VGS = 10 Vdc, ID = 300 mAdc)
(VGS = 4.5 Vdc, ID = 100 mAdc)
Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 V)
Output Capacitance
(VDS = 5.0 V)
Transfer Capacitance
(VDG = 5.0 V)
SWITCHING CHARACTERISTICS (Note 3)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 15 Vdc, ID = 300 mAdc,
RL = 50 W)
Fall Time
Gate Charge (See Figure 5)
SOURCEDRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
Forward Voltage (Note 3)
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
3. Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
rDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
IS
ISM
VSD
Min Typ Max
Unit
20
Vdc
mAdc
− − 1.0
− − 10
±100
nAdc
1.0 1.7 2.4
Vdc
0.75 1.0
1.0 1.4
W
450 mMhos
45
25
5.0
pF
2.5
2.5
15
0.8
1400
ns
pC
− − 0.3
− − 0.75
0.85
A
V
TYPICAL CHARACTERISTICS
1.0
0.9
0.8 VGS = 4 V
0.7
0.6
0.5 VGS = 3.5 V
0.4
0.3 VGS = 3 V
0.2
0.1 VGS = 2.5 V
0
0 1 2 3 4 5 6 7 8 9 10
VDS, DRAIN - SOURCE VOLTAGE (VOLTS)
Figure 1. Typical Drain Characteristics
1.6
1.4
1.2
VGS = 4.5 V
1.0
ID = 100 mA
0.8
0.6
VGS = 10 V
ID = 300 mA
0.4
0.2
0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
TEMPERATURE (°C)
Figure 2. On Resistance versus Temperature
http://onsemi.com
2


Part Number MMBF2201N
Description Power MOSFET
Maker ON Semiconductor
Total Page 4 Pages
PDF Download
MMBF2201N pdf
MMBF2201N Datasheet PDF
[partsNo] view html
View PDF for Mobile








Similar Datasheet

1 MMBF2201N Power MOSFET ON Semiconductor
ON Semiconductor
MMBF2201N pdf
2 MMBF2201NT1 N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET Motorola
Motorola
MMBF2201NT1 pdf
3 MMBF2201NT1 Power MOSFET ON Semiconductor
ON Semiconductor
MMBF2201NT1 pdf
4 MMBF2201NT1G Power MOSFET ON Semiconductor
ON Semiconductor
MMBF2201NT1G pdf





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy